초록 ▼

A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate

A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.

대표청구항 ▼

[ What is claimed is:] [1.]1. A process for producing an SOI substrate comprising the steps of:forming an insulating film on one surface of a single-crystal semiconductor substrate;patterning said insulating film, thereby selectively forming a mask;converting a portion of said single-crystal semicon

[ What is claimed is:] [1.]1. A process for producing an SOI substrate comprising the steps of:forming an insulating film on one surface of a single-crystal semiconductor substrate;patterning said insulating film, thereby selectively forming a mask;converting a portion of said single-crystal semiconductor substrate into at least one porous layer by using an anodizing treatment;removing said mask;forming a first silicon oxide layer on said one surface;adding hydrogen into said single-crystal silicon substrate and said porous layer through said first silicon oxide layer, thereby forming a hydrogen-added layer;adhering together said single-crystal semiconductor substrate and a supporting substrate provided with a second silicon oxide layer thereon;performing a first heat treatment, thereby separating said single-crystal semiconductor substrate and said porous layer along said hydrogen-added layer;performing a second heat treatment of said supporting substrate at 900-1200.degree. C.; andremoving said porous layer present over said supporting substrate.