초록 ▼

A method for forming a thin-film resistor includes forming two insulators on the thin-film resistor, forming contact holes by performing wet etching processes, and forming interconnect and contact plugs at the same time. The invention also provides another method for forming a thin-film resistor tha

A method for forming a thin-film resistor includes forming two insulators on the thin-film resistor, forming contact holes by performing wet etching processes, and forming interconnect and contact plugs at the same time. The invention also provides another method for forming a thin-film resistor that forms a thin-film resistor over the passivation layer instead. That is, forming a thin-film resistor on the top of the device, so that the resistance can be re-modified according to the actual needs.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for forming a thin-film resistor, comprising the steps of:providing a substrate having a first insulator disposed thereon;forming a thin-film resistor layer on the first insulator;patterning the thin-film resistor layer to form a thin-film,resistor;forming a se

[ What is claimed is:] [1.]1. A method for forming a thin-film resistor, comprising the steps of:providing a substrate having a first insulator disposed thereon;forming a thin-film resistor layer on the first insulator;patterning the thin-film resistor layer to form a thin-film,resistor;forming a second insulator on the substrate and the thin-film resistor;forming a third insulator on the second insulator;forming a first contact hole through said second and third insulators to expose a first region of said substrate;forming a second contact hole through said second and third insulators to expose a second region of said thin-film resistor, wherein said third insulator masks the second insulator in forming said second contact hole; andforming first and second interconnects by performing a metallization process to fill the first contact hole and the second contact hole with metal, respectively.