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Pixel TFT and driver TFT having different gate insulation width 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/00
출원번호 US-0477865 (2000-01-05)
우선권정보 JP0004701 (1999-01-11)
발명자 / 주소
  • Yamazaki Shunpei,JPX
  • Koyama Jun,JPX
  • Shibata Hiroshi,JPX
  • Fukunaga Takeshi,JPX
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd., JPX
대리인 / 주소
    Cook, Alex, McFarron, Manzo, Cummings & Mehler, Ltd.
인용정보 피인용 횟수 : 178  인용 특허 : 18

초록 ▼

A semiconductor device having high reliability, in which TFTs with appropriate structures for the circuit functions are arranged, is provided. Gate insulating films (115) and (116) of a driver TFT are designed thinner than a gate insulating film (117) of a pixel TFT in a semiconductor device having

대표청구항 ▼

[ What is claimed is:] [1.]1. A semiconductor device having a driver circuit section and a pixel section on the same substrate, wherein:a driver TFT of said driver circuit section, and a pixel TFT of said pixel section, each have a gate insulating film with a mutually differing film thickness; anda

이 특허에 인용된 특허 (18)

  1. Doklan Raymond H. (Whitehall Township ; Lehigh County PA) Martin ; Jr. Edward P. (Bethlehem PA) Roy Pradip K. (Allentown PA) Shive Scott F. (Bethlehem PA) Sinha Ashok K. (Allentown PA), Fabricating a semiconductor device with low defect density oxide.
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  9. Konuma Toshimitsu (Kanagawa JPX) Hiroki Masaaki (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Method of fabricating thin film semiconductor integrated circuit.
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  17. Konuma Toshimitsu (Kanagawa JPX) Hiroki Masaaki (Kanagawa JPX) Zhang Hongyong (Kanagawa JPX) Yamamoto Mutsuo (Kanagawa JPX) Takemura Yasuhiko (Kanagawa JPX), Thin film semiconductor integrated circuit and method of fabricating the same.
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