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Fabrication of clad hollow cathode magnetron sputter targets 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B21D-039/00
  • C23C-014/02
출원번호 US-0368062 (1999-08-03)
발명자 / 주소
  • Kulkarni Shailesh
  • Lam Raymond K. F.
  • Sica Tony
출원인 / 주소
  • Praxair S.T. Technology, Inc.
대리인 / 주소
    Biederman
인용정보 피인용 횟수 : 44  인용 특허 : 9

초록

A method is provided for forming clad hollow cathode magnetron sputter targets that are lighter in weight and/or less expensive than monolithic targets. A plate of sputter target material is bonded to a sheet of cladding material that is lighter in weight and/or less expensive than the sputter targe

대표청구항

[ What is claimed is:] [1.]1. A method of fabricating sputter targets comprising the steps of:bonding a plate of sputter target material to a sheet of cladding material to form a clad target assembly; anddeep drawing the clad target assembly into a clad hollow cathode magnetron sputter target, the c

이 특허에 인용된 특허 (9)

  1. Johnson Howard B. (Cincinnati OH), Alumina and MgO preheatable insulating refractory liners and methods of using.
  2. Acheson Rees H. (Hill Rd. Alstead NH 03602), Automatic welding apparatus for weld build-up and method of achieving weld build-up.
  3. Yan Yingchao,NLX ; Faber Anne Jans,NLX, Erbium-doped planar waveguide.
  4. Emigh Roger Alan (Post Falls ID) Willett William Bryce (Veradale WA), Metal sputtering target assembly.
  5. Shibamori Seiji (Nikko JPX) Ishida Yoji (Nikko JPX), Method for manufacturing aluminum or aluminum alloy clad steel sheet or strip.
  6. Strothers Susan D. (Spokane WA) Delano Robert G. (Valleyford WA) Steed Garold L. (Spokane WA), Method of manufacturing sputtering target assembly.
  7. Dunlop John A. ; Goldstein Michael ; Feldewerth Gerald B. ; Shim Cari ; Schittny Stephan, Method of reducing sputtering burn-in time, minimizing sputtered particulate, and target assembly therefor.
  8. Eckert John K. ; Farina Jeffrey M. ; Gadda Joseph P. ; Kelly Jeffrey C. ; Thomas John G., Multilayer composite tubular structure and method of making.
  9. Hale John Richard ; Farina Jeffrey M. ; Koehler Philip J. ; Maropis Nicholas, Thermionic cathode with continuous bimetallic wall.

이 특허를 인용한 특허 (44)

  1. Brown, Karl M.; Pipitone, John; Mehta, Vineet; Hofmann, Ralf, Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas.
  2. Jianxing Li ; Michael R. Pinter ; Steven Wu, Container-shaped physical vapor deposition targets.
  3. Li, Jianxing; Pinter, Michael R.; Wu, Steven, Container-shaped physical vapor deposition targets.
  4. Miller, Steven A.; Gaydos, Mark; Shekhter, Leonid N.; Gulsoy, Gokce, Dynamic dehydriding of refractory metal powders.
  5. Miller, Steven A.; Gaydos, Mark; Shekhter, Leonid N.; Gulsoy, Gokce, Dynamic dehydriding of refractory metal powders.
  6. Subramani,Anantha K.; Vesci,Anthony; Dickerson,Scott, Electroformed sputtering target.
  7. Miller, Steven A.; Kumar, Prabhat; Wu, Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made therefrom.
  8. Ivanov, Eugene Y., High purity target manufacturing methods.
  9. Ford, Robert B.; Michaluk, Christopher A., Hollow cathode target and methods of making same.
  10. Ford,Robert B.; Michaluk,Christopher A., Hollow cathode target and methods of making same.
  11. Melvin K. Holcomb ; William E. Barnes ; Steven L. Bardus, Insert target assembly and method of making same.
  12. Dary, Francois-Charles; Gaydos, Mark; Loewenthal, William; Miller, Steven A.; Rozak, Gary; Volchko, Scott Jeffrey; Zimmermann, Stefan; Stawovy, Michael Thomas, Large-area sputtering targets.
  13. Thiel, James P., MSVD coating process.
  14. Bardos, Ladislav; Barankova, Hana, Magnetron plasma apparatus.
  15. Yamakoshi, Yasuhiro; Mogaki, Kenichi, Method for connecting magnetic substance target to backing plate, and magnetic substance target.
  16. Brown, Karl M.; Pipitone, John; Mehta, Vineet, Method for plasma-enhanced physical vapor deposition of copper with RF source power applied to the target.
  17. Wickersham, Jr., Charles E., Method of bonding sputtering target materials.
  18. Brown, Karl M.; Pipitone, John; Mehta, Vineet, Method of performing physical vapor deposition with RF plasma source power applied to the target using a magnetron.
  19. Miller, Steven A.; Shekhter, Leonid N.; Zimmermann, Stefan, Methods of joining metallic protective layers.
  20. Miller, Steven A.; Shekhter, Leonid N.; Zimmermann, Stefan, Methods of joining metallic protective layers.
  21. Volchko, Scott Jeffrey; Zimmermann, Stefan; Miller, Steven A.; Stawovy, Michael Thomas, Methods of manufacturing high-strength large-area sputtering targets.
  22. Loewenthal, William; Miller, Steven Alfred, Methods of manufacturing large-area sputtering targets.
  23. Miller, Steven A.; Dary, Francois-Charles; Gaydos, Mark; Rozak, Gary, Methods of manufacturing large-area sputtering targets by cold spray.
  24. Volchko, Scott Jeffrey; Loewenthal, William; Zimmermann, Stefan; Gaydos, Mark; Miller, Steven Alfred, Methods of manufacturing large-area sputtering targets using interlocking joints.
  25. Volchko, Scott Jeffrey; Loewenthal, William; Zimmermann, Stefan; Gaydos, Mark; Miller, Steven Alfred, Methods of manufacturing large-area sputtering targets using interlocking joints.
  26. Miller, Steven A.; Kumar, Prabhat; Wu, Rong-chein Richard; Sun, Shuwei; Zimmermann, Stefan; Schmidt-Park, Olaf, Methods of rejuvenating sputtering targets.
  27. Bailey, Robert S.; Holcomb, Melvin K.; Smathers, David B.; Wiemels, Timothy, Non-planar sputter targets having crystallographic orientations promoting uniform deposition.
  28. Okabe, Takeo; Nagasawa, Masaru, Packaging device and packaging method for hollow cathode type sputtering target.
  29. Brown, Karl M.; Pipitone, John; Mehta, Vineet, Physical vapor deposition plasma reactor with RF source power applied to the target and having a magnetron.
  30. Brown,Karl M.; Pipitone,John; Mehta,Vineet; Hofmann,Ralf; Wang,Wei W.; Sherstinsky,Semyon, Physical vapor deposition plasma reactor with VHF source power applied through the workpiece.
  31. Shekhter, Leonid N.; Miller, Steven A.; Haywiser, Leah F.; Wu, Rong-Chein R., Process for preparing metal powders having low oxygen content, powders so-produced and uses thereof.
  32. Scheible, Kathleen; Flanigan, Michael Allen; Yoshidome, Goichi; Allen, Adolph Miller; Pavloff, Cristopher M., Process kit and target for substrate processing chamber.
  33. Young, Donny; Ritchie, Alan Alexander; Hong, Ilyoung (Richard); Scheible, Kathleen A., Process kit components for titanium sputtering chamber.
  34. Jepson, Peter R., Refractory metal pots.
  35. Jepson, Peter R., Refractory metal pots.
  36. Yuan, Yongwen; Ivanov, Eugene Y.; Liu, Yang; Frausto, Phil; Miao, Weifang, Silicon sputtering target with special surface treatment and good particle performance and methods of making the same.
  37. Kailasam, Sridhar K.; Powell, Ronald A.; Settles, E. Derryck, Sputter apparatus for producing multi-component metal alloy films and method for making the same.
  38. Hukushima, Atsushi, Sputtering target and manufacturing method thereof.
  39. Wickersham, Jr., Charles E.; Levit, Vladimir; Alexander, P. Todd, Sputtering target and method of fabrication.
  40. Allen, Adolph Miller; Yoon, Ki Hwan; Guo, Ted; Yang, Hong S.; Yu, Sang-Ho, Sputtering target having increased life and sputtering uniformity.
  41. Wickersham, Jr., Charles E.; Levit, Vladimir; Alexander, P. Todd, Tantalum sputtering target and method of fabrication.
  42. Ferrasse, Stephane; Hort, Werner H.; Kim, Jaeyeon; Alford, Frank C., Target designs and related methods for coupled target assemblies, methods of production and uses thereof.
  43. Ritchie, Alan Alexander; Young, Donny; Hong, Ilyoung (Richard); Scheible, Kathleen A.; Kelkar, Umesh, Target for sputtering chamber.
  44. Pigur, Bjoern; Snowman, Alfred, Texture and grain size controlled hollow cathode magnetron targets and method of manufacture.
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