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In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafer

In a high-temperature, high-pressure treatment method for semiconductor wafer for charging a wafer-like semiconductor material in a pressure vessel, forcing and pressurizing an inert gas such as argon thereto, and raising the temperature by heating by use of an electric resistance type heater, wafers are vertically stacked in the treatment chamber, and the heater is arranged within the treatment chamber to perform the treatment while supplying a heating power by DC to the heater, whereby generation of particles from the heater is suppressed.

대표청구항 ▼

[ What is claimed is:] [1.]1. A high-temperature, high-pressure treatment method for semiconductor wafers, comprising the steps of:vertically stacking wafers in a treatment chamber within a pressure vessel;forcing and pressurizing an inert gas such as argon into the treatment chamber, and raising th

[ What is claimed is:] [1.]1. A high-temperature, high-pressure treatment method for semiconductor wafers, comprising the steps of:vertically stacking wafers in a treatment chamber within a pressure vessel;forcing and pressurizing an inert gas such as argon into the treatment chamber, and raising the temperature in the treatment chamber by using an electric resistance heater located within the treatment chamber to perform the treatment while supplying DC heating power to the heater.