초록 ▼

A semiconductor device including an interconnection structure having superior electrical characteristics and allowing higher speed of operation and lower power consumption even when miniaturized, manufacturing method thereof and a method of designing a semiconductor circuit used in the manufacturing

A semiconductor device including an interconnection structure having superior electrical characteristics and allowing higher speed of operation and lower power consumption even when miniaturized, manufacturing method thereof and a method of designing a semiconductor circuit used in the manufacturing method are provided. In the semiconductor device, a conductive region is formed on a main surface of a semiconductor substrate. A first interconnection layer is electrically connected to the conductive region, has a relatively short line length, and contains a material having relatively high electrical resistance. A first insulator is formed to surround the first interconnection layer and has a relatively low dielectric constant. A second interconnection layer is formed on the main surface of the semiconductor substrate, contains a material having low electrical resistance than the material contained in the first interconnection layer, and has longer line length than the first interconnection layer. A second insulator is formed to surround the second interconnection layer and has a dielectric constant higher than the first insulator.

대표청구항 ▼

[ What is claimed is:] [1.]1. A semiconductor device, comprising:a semiconductor substrate having a main surface;a conductive region formed on the main surface of said semiconductor substrate;a first interconnection layer electrically connected to said conductive region, having relatively short line

[ What is claimed is:] [1.]1. A semiconductor device, comprising:a semiconductor substrate having a main surface;a conductive region formed on the main surface of said semiconductor substrate;a first interconnection layer electrically connected to said conductive region, having relatively short line length and containing a material having relatively high electrical resistance;a first insulator formed to surround said first interconnection layer and having relatively low dielectric constant;a second interconnection layer formed on the main surface of said semiconductor substrate, containing a material having electrical resistance lower than the material contained in said first interconnection layer and having longer line length than said first interconnection layer; anda second insulator formed to surround said second interconnection layer and having dielectric constant higher than said first insulator.