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An improved method of performing a dual damascene etch through a layer stack disposed above a substrate. The layer stack includes an underlying device layer and an insulating layer disposed above the underlying device layer. The method includes forming a trench in a top surface of the insulating lay

An improved method of performing a dual damascene etch through a layer stack disposed above a substrate. The layer stack includes an underlying device layer and an insulating layer disposed above the underlying device layer. The method includes forming a trench in a top surface of the insulating layer such that the trench is positioned over the underlying device layer and separated therefrom by insulating material at a bottom of the trench. The method also includes, depositing flowable oxide over the top surface of the insulating layer and into the trench followed by planarizing the flowable oxide down to about a level of the top surface of the insulating layer. Further, the method includes, etching through the flowable oxide within the trench and through insulating material at the bottom of the trench down to the underlying device layer to form a via.

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[ What is claimed is:] [1.]1. A method of performing a dual damascene etch through a layer stack comprising an underlying device layer, an insulating layer disposed above said underlying device layer, said method comprising:forming a trench in a top surface of said insulating layer, said trench bein

[ What is claimed is:] [1.]1. A method of performing a dual damascene etch through a layer stack comprising an underlying device layer, an insulating layer disposed above said underlying device layer, said method comprising:forming a trench in a top surface of said insulating layer, said trench being positioned over said underlying device layer and separated therefrom by insulating material at a bottom of said trench;depositing flowable oxide over said top surface of said insulating layer and into said trench;planarizing said flowable oxide down to about a level of said top surface of said insulating layer;etching through said flowable oxide within said trench and through the insulating material at said bottom of said trench down to said underlying device layer to form a via in communication with the trench; anddepositing an anti-reflective layer above said flowable oxide to facilitate said etching through said flowable oxide and said insulating layer.