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[미국특허] Multi-layered thin-film functional device and magnetoresistance effect element 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11B-005/66
출원번호 US-0273496 (1999-03-22)
우선권정보 JP0185481 (1998-06-30)
발명자 / 주소
  • Kamiguchi Yuzo,JPX
  • Saito Akiko,JPX
  • Koui Katsuhiko,JPX
  • Yoshikawa Masatoshi,JPX
  • Yuasa Hiromi,JPX
  • Fukuzawa Hideaki,JPX
  • Hashimoto Susumu,JPX
  • Iwasaki Hitoshi,JPX
  • Yoda Hiroaki,JPX
  • Sahashi
출원인 / 주소
  • Kabushiki Kaisha Toshiba, JPX
대리인 / 주소
    Foley & Lardner
인용정보 피인용 횟수 : 78  인용 특허 : 1

초록 ▼

According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth contro

대표청구항 ▼

[ What is claimed is:] [1.]1. A magnetoresistance effect element comprising a first magnetic layer susceptible in magnetization to an external magnetic field, a second magnetic layer substantially pinned in magnetization, and a non-magnetic intermediate layer interposed between said first magnetic l

이 특허에 인용된 특허 (1) 인용/피인용 타임라인 분석

  1. Ohta Manabu,JPX ; Noguchi Kiyoshi,JPX ; Sano Masashi,JPX ; Araki Satoru,JPX ; Oike Taro,JPX, Magnetic multilayered film, magnetoresistance effect element and magnetoresistance device.
    상세보기

이 특허를 인용한 특허 (78) 인용/피인용 타임라인 분석

  1. Xiao, Gang; Hao, Qiang, Beta tungsten thin films with giant spin hall effect for use in compositions and structures with perpendicular magnetic anisotropy.
    상세보기
  2. Li,Jinshan; York,Brian R.; Zeltser,Alexander M., Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layers.
    상세보기
  3. Carey,Matthew J.; Childress,Jeffrey R.; Maat,Stefan, Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with improved antiparallel-pinned structure.
    상세보기
  4. Mattheis,Roland; Van Den Berg,Hugo, Digital memory cell device.
    상세보기
  5. Hardayal (Harry) Singh Gill, Dual hybrid magnetic tunnel junction/giant magnetoresistive sensor.
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  6. Hasegawa, Naoya, Exchange coupled film having magnetic layer with non-uniform composition and magnetic sensing element including the same.
    상세보기
  7. Hasegawa,Naoya; Saito,Masamichi, Exchange coupling film and magnetoresistive element using the same.
    상세보기
  8. Hasegawa,Naoya; Saito,Masamichi, Exchange coupling film and magnetoresistive element using the same.
    상세보기
  9. Hasegawa,Naoya; Saito,Masamichi, Exchange coupling film and magnetoresistive element using the same.
    상세보기
  10. Hasegawa,Naoya; Saito,Masamichi, Exchange coupling film and magnetoresistive element using the same.
    상세보기
  11. Hasegawa,Naoya; Saito,Masamichi, Exchange coupling film and magnetoresistive element using the same.
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  12. Hasegawa,Naoya; Saito,Masamichi, Exchange coupling film and magnetoresistive element using the same.
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  13. Hasegawa,Naoya; Saito,Masamichi, Exchange coupling film and magnetoresistive element using the same.
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  14. Gill, Hardayal Singh, Free layer structure for a spin valve sensor with a specular reflecting layer composed of ferromagnetic oxide.
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  15. Huber, William Hullinger; Wei, Ching-Yeu, Functional blocks for assembly.
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  16. Gill, Hardayal Singh, GMR coefficient enhancement for spin valve structures.
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  17. Chang, Jei-Wei; Dieny, Bernard; Chen, Mao-Min; Horng, Cheng T.; Ju, Kochan; Liao, Simon, GMR configuration with enhanced spin filtering.
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  18. Chang, Jei-Wei; Dieny, Bernard; Chen, Mao-Min; Horng, Cheng; Ju, Kochan; Liao, Simon, GMR configuration with enhanced spin filtering.
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  19. Drewes,Joel; Witcraft,William, Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to provide smooth interfaces.
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  20. Komuro, Matahiro; Satsu, Yuichi; Imagawa, Takao, High resistance magnet and motor using the same.
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  21. Komuro, Matahiro; Satsu, Yuichi; Imagawa, Takao, High resistance magnet and motor using the same.
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  22. Komuro, Matahiro; Satsu, Yuichi; Imagawa, Takao, High resistance magnet and motor using the same.
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  23. Chen, Eugene Youjun; Wang, Shengyuan, Magnetic element having perpendicular anisotropy with enhanced efficiency.
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  24. Ikeda,Shoji; Kubomiya,Takayuki; Matsuoka,Masaaki, Magnetic film for magnetic head.
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  25. Oh, Sechung; Lee, Kyung Jin; Lee, Jangeun; Suh, Hong Ju, Magnetic memory devices including magnetic layers having different products of saturated magnetization and thickness and related methods.
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  26. Fukuzawa, Hideaki; Fuji, Yoshihiko; Yuasa, Hiromi; Iwasaki, Hitoshi, Magnetic recording element including a thin film layer with changeable magnetization direction.
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  27. Fuji, Yoshihiko; Fukuzawa, Hideaki; Yuasa, Hiromi, Magneto-resistance effect element.
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  28. Fuke, Hiromi; Hashimoto, Susumu; Takagishi, Masayuki; Iwasaki, Hitoshi, Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element.
    상세보기
  29. Maehara, Hiroki; Osada, Tomoaki; Doi, Mihoko; Tsunekawa, Koji; Watanabe, Naoki, Magnetoresistance effect device and a preform therefor.
    상세보기
  30. Ibusuki, Takahiro; Sato, Masashige; Umehara, Shinjiro, Magnetoresistance effect device, magnetic lamination structural body, and manufacture method for magnetic lamination structural body.
    상세보기
  31. Fukuzawa, Hideaki; Koi, Katsuhiko; Fuke, Hiromi; Tomita, Hiroshi; Iwasaki, Hitoshi; Sahashi, Masashi, Magnetoresistance effect element.
    상세보기
  32. Fukuzawa,Hideaki; Koi,Katsuhiko; Fuke,Hiromi; Tomita,Hiroshi; Iwasaki,Hitoshi; Sahashi,Masashi, Magnetoresistance effect element.
    상세보기
  33. Kamiguchi, Yuuzo; Yuasa, Hiromi; Nagata, Tomohiko; Yoda, Hiroaki; Koui, Katsuhiko; Yoshikawa, Masatoshi; Iwasaki, Hitoshi; Sahashi, Masashi; Takagishi, Masayuki, Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system.
    상세보기
  34. Kamiguchi, Yuuzo; Yuasa, Hiromi; Nagata, Tomohiko; Yoda, Hiroaki; Koui, Katsuhiko; Yoshikawa, Masatoshi; Iwasaki, Hitoshi; Sahashi, Masashi; Takagishi, Masayuki, Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system.
    상세보기
  35. Kamiguchi, Yuuzo; Yuasa, Hiromi; Nagata, Tomohiko; Yoda, Hiroaki; Koui, Katsuhiko; Yoshikawa, Masatoshi; Iwasaki, Hitoshi; Sahashi, Masashi; Takagishi, Masayuki, Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system.
    상세보기
  36. Kamiguchi,Yuuzo; Yuasa,Hiromi; Nagata,Tomohiko; Yoda,Hiroaki; Koui,Katsuhiko; Yoshikawa,Masatoshi; Iwasaki,Hitoshi; Sahashi,Masashi; Takagishi,Masayuki, Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system.
    상세보기
  37. Fukuzawa,Hideaki; Kamiguchi,Yuzo; Koui,Katsuhiko; Nakamura,Shin ichi; Iwasaki,Hitoshi; Saito,Kazuhiro; Fuke,Hiromi; Yoshikawa,Masatoshi; Hashimoto,Susumu; Sahashi,Masashi, Magnetoresistance effect element, magnetic head, and magnetic storage system using a giant magnetoresistance effect element.
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  38. Fukuzawa,Hideaki; Kamiguchi,Yuzo; Koui,Katsuhiko; Nakamura,Shin ichi; Iwasaki,Hitoshi; Saito,Kazuhiro; Fuke,Hiromi; Yoshikawa,Masatoshi; Hashimoto,Susumu; Sahashi,Masashi, Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system.
    상세보기
  39. Fukuzawa,Hideaki; Kamiguchi,Yuzo; Koui,Katsuhiko; Nakamura,Shin ichi; Iwasaki,Hitoshi; Saito,Kazuhiro; Fuke,Hiromi; Yoshikawa,Masatoshi; Hashimoto,Susumu; Sahashi,Masashi, Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system.
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  40. Fukuzawa, Hideaki; Yuasa, Hiromi; Fuke, Hiromi; Iwasaki, Hitoshi; Sahashi, Masashi, Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory.
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  41. Fukuzawa, Hideaki; Yuasa, Hiromi; Fuke, Hiromi; Iwasaki, Hitoshi; Sahashi, Masashi, Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory.
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  44. Fukuzawa, Hideaki; Yuasa, Hiromi; Fuji, Yoshihiko; Iwasaki, Hitoshi, Magnetoresistive effect element and manufacturing method thereof.
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  45. Fukuzawa, Hideaki; Murakami, Shuichi; Yuasa, Hiromi; Fuji, Yoshihiko, Magnetoresistive element and method of manufacturing the same.
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  47. Fuji, Yoshihiko; Fukuzawa, Hideaki; Yuasa, Hiromi, Magnetoresistive element having free and/or pinned layer magnetic compound expressed by M1M2O.
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  48. Fuji, Yoshihiko; Fukuzawa, Hideaki; Yuasa, Hiromi, Magnetoresistive element having free layer magnetic compound expressed by M1M2O.
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  49. Mizuguchi, Tetsuya, Magnetoresistive-effect thin film, magnetoresistive-effect element, and magnetoresistive-effect magnetic head.
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