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특허 상세정보

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내보내기 페이스북 공유 카카오톡 공유

Multi-layered thin-film functional device and magnetoresistance effect element

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) G11B-005/66   
미국특허분류(USC) 428/332 ; 428/336 ; 428/692 ; 428/694T ; 428/694TM ; 428/694TS ; 428/900 ; 360/113
출원번호 US-0273496 (1999-03-22)
우선권정보 JP0185481 (1998-06-30)
발명자 / 주소
  • Kamiguchi Yuzo,JPX
  • Saito Akiko,JPX
  • Koui Katsuhiko,JPX
  • Yoshikawa Masatoshi,JPX
  • Yuasa Hiromi,JPX
  • Fukuzawa Hideaki,JPX
  • Hashimoto Susumu,JPX
  • Iwasaki Hitoshi,JPX
  • Yoda Hiroaki,JPX
  • Sahashi
출원인 / 주소
  • Kabushiki Kaisha Toshiba, JPX
대리인 / 주소
    Foley & Lardner
인용정보 피인용 횟수 : 78  인용 특허 : 1
초록
▼

According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and ...

대표
청구항
▼

[ What is claimed is:] [1.]1. A magnetoresistance effect element comprising a first magnetic layer susceptible in magnetization to an external magnetic field, a second magnetic layer substantially pinned in magnetization, and a non-magnetic intermediate layer interposed between said first magnetic layer and said second magnetic layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and a fourth layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nit...

이 특허에 인용된 특허 (1)

  1. Ohta Manabu,JPX ; Noguchi Kiyoshi,JPX ; Sano Masashi,JPX ; Araki Satoru,JPX ; Oike Taro,JPX, Magnetic multilayered film, magnetoresistance effect element and magnetoresistance device.

이 특허를 인용한 특허 (78)

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