초록 ▼

A microelectronic substrate and method for manufacture. In one embodiment, the microelectronic substrate includes a body having a first surface, a second surface facing a direction opposite from the first surface, and a plurality of voids in the body between the first and second surfaces. The voids

A microelectronic substrate and method for manufacture. In one embodiment, the microelectronic substrate includes a body having a first surface, a second surface facing a direction opposite from the first surface, and a plurality of voids in the body between the first and second surfaces. The voids can extend from the first surface to a separation region beneath the first surface. At least one operable microelectronic device is formed at and/or proximate to the first surface of the substrate material, and then a first stratum of the microelectronic substrate above the separation region is separated from a second stratum of the microelectronic substrate below the separation region. The first stratum of the microelectronic substrate can be further separated into discrete microelectronic dies before the first stratum is separated from the second stratum. In one aspect of this embodiment, the substrate can support a film and microelectronic devices can be formed in the film and/or in the substrate.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for processing a microelectronic substrate, comprising:providing a microelectronic substrate having a first surface and a second surface facing a direction opposite from the first surface;forming a plurality of voids in the microelectronic substrate, each void

[ What is claimed is:] [1.]1. A method for processing a microelectronic substrate, comprising:providing a microelectronic substrate having a first surface and a second surface facing a direction opposite from the first surface;forming a plurality of voids in the microelectronic substrate, each void having an open end at the first surface and extending from the first surface to a separation region between the first and second surfaces;forming at least one operable microelectronic device at and/or proximate to the first surface of the microelectronic substrate; andseparating a first stratum of the microelectronic substrate above the separation region from a second stratum of the microelectronic substrate below the separation region.