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Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/20
  • H01L-021/36
출원번호 US-0499096 (2000-02-04)
발명자 / 주소
  • Alivisatos A. Paul
  • Peng Xiaogang
  • Manna Liberato,ITX
출원인 / 주소
  • The Regents of the University of California
대리인 / 주소
    Taylor
인용정보 피인용 횟수 : 227  인용 특허 : 5

초록 ▼

A process for the formation of shaped Group III-V semiconductor nanocrystals comprises contacting the semiconductor nanocrystal precursors with a liquid media comprising a binary mixture of phosphorus-containing organic surfactants capable of promoting the growth of either spherical semiconductor na

대표청구항 ▼

[ Having thus described the invention what is claimed is:] [1.]1. A process for the formation of Group III-V semiconductor nanocrystals comprises introducing the precursors into a heated binary mixture of first and second different surfactants capable of promoting the growth of either spherical semi

이 특허에 인용된 특허 (5)

  1. Alivisatos A. Paul (Oakland CA) Colvin Vickie (Springfield NJ), Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making s.
    상세보기
  2. Alivisatos A. Paul (Berkeley CA) Goldstein Avery N. (Oakland CA), Low temperature thin films formed from nanocrystal precursors.
    상세보기
  3. Wells Richard L. (Durham NC) Kher Shreyas S. (Durham NC), Method of synthesizing III-V semiconductor nanocrystals.
    상세보기
  4. Alivisatos A. Paul (Berkeley CA) Olshavsky Michael A. (Brunswick OH), Preparation of III-V semiconductor nanocrystals.
    상세보기
  5. Alivisatos A. Paul ; Colvin Vicki L., Semiconductor nanocrystals covalently bound to solid inorganic surfaces using self-assembled monolayers.
    상세보기

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