초록 ▼

Method and apparatus generate a mixture of the vapor of an organic liquid such as tetraethylorthosilicate (TEOS) and an inert gas such as helium. The ratio of organic vapor to inert gas in the mixture is accurately and continuously controlled as required in semiconductor manufacturing. The apparatus

Method and apparatus generate a mixture of the vapor of an organic liquid such as tetraethylorthosilicate (TEOS) and an inert gas such as helium. The ratio of organic vapor to inert gas in the mixture is accurately and continuously controlled as required in semiconductor manufacturing. The apparatus encloses a bubbler chamber which is filled with an organic liquid (e.g., TEOS) to a set level that is automatically maintained. The liquid is also maintained at an exact temperature (e.g., 75.degree. C.). Inert gas (e.g., helium) flows into the bubbler chamber at a controlled rate and continuously evaporates some of the liquid therein. The flow of liquid into the bubbler chamber is monitored by a liquid control circuit, and flow of gas is controlled by a gas control circuit. A feedback signal from the liquid control circuit to the gas control circuit incrementally adjusts gas flow into the bubbler chamber to keep the liquid therein at the set level.

대표청구항 ▼

[ What is claimed is:] [1.]1. Apparatus for generating a vapor and gas mixture with precise and continuous control of the vapor to gas ratio, the apparatus comprising:a housing defining a chamber for containing a liquid to be vaporized;a liquid supply line for flowing liquid into the chamber;a gas s

[ What is claimed is:] [1.]1. Apparatus for generating a vapor and gas mixture with precise and continuous control of the vapor to gas ratio, the apparatus comprising:a housing defining a chamber for containing a liquid to be vaporized;a liquid supply line for flowing liquid into the chamber;a gas supply line for flowing gas into the chamber to bubble through the liquid in the chamber and to evaporate the liquid therein;an exhaust line for exhausting the mixture of vapor and gas from the chamber; anda control circuit for controlling the liquid flow rate and for precisely and continuously controlling the ratio of vapor to gas in the exhausted mixture, the control circuit generating a feedback signal by measuring the flow of liquid into the chamber and determining whether the measured liquid flow rate is faster or slower than a desired amount, the feedback signal adjusting the flow of gas into the chamber, said control circuit adjusting the flow of liquid to maintain a precisely controlled liquid level in the chamber.