초록 ▼

An integrated circuit includes at least one porous silicon oxycarbide (SiOC) insulator, which provides good mechanical strength and a low dielectric constant (e.g., .epsilon..sub.R <2) for minimizing parasitic capacitance. The insulator provides IC isolation, such as between circuit elements, betwee

An integrated circuit includes at least one porous silicon oxycarbide (SiOC) insulator, which provides good mechanical strength and a low dielectric constant (e.g., .epsilon..sub.R <2) for minimizing parasitic capacitance. The insulator provides IC isolation, such as between circuit elements, between interconnection lines, between circuit elements and interconnection lines, or as a passivation layer overlying both circuit elements and interconnection lines. The low dielectric constant silicon oxycarbide isolation insulator of the present invention reduces the parasitic capacitance between circuit nodes. As a result, the silicon oxycarbide isolation insulator advantageously provides reduced noise and signal crosstalk between circuit nodes, reduced power consumption, faster circuit operation, and minimizes the risk of potential timing faults.

대표청구항 ▼

[ What is claimed is:] [1.]1. An integrated circuit formed on a substrate, comprising:a plurality of transistors formed on the substrate;a plurality of first conductors interconnecting ones of the transistors; anda silicon oxycarbide insulator insulating portions of the first conductive layer from t

[ What is claimed is:] [1.]1. An integrated circuit formed on a substrate, comprising:a plurality of transistors formed on the substrate;a plurality of first conductors interconnecting ones of the transistors; anda silicon oxycarbide insulator insulating portions of the first conductive layer from the transistors.