초록 ▼

The invention relates to a process for obtaining a thin film from a substrate, the film being delimited in the substrate by ionic implantation and by heat treatment inducing a fracture line along which the film can be separated from the rest of the substrate. A particular area, for example composed

The invention relates to a process for obtaining a thin film from a substrate, the film being delimited in the substrate by ionic implantation and by heat treatment inducing a fracture line along which the film can be separated from the rest of the substrate. A particular area, for example composed of a gate oxide layer (15) and the channel area (19) of a MOS transistor (12) created in the substrate region (10) intended to form the tin film (20), this area may be protected by ionic implantation by masking using the transistor gate (16), which does not prevent the fracture from occurring provided that the width of the area does not exceed a limiting dimension determined for the material forming the substrate.

대표청구항 ▼

[ What is claimed is:] [1.]1. Process for obtaining a thin film starting from a semiconducting substrate, this thin film being composed of a region of the substrate adjacent to one of its faces and separated from the rest of the substrate, at least one transistor being created from the said region,

[ What is claimed is:] [1.]1. Process for obtaining a thin film starting from a semiconducting substrate, this thin film being composed of a region of the substrate adjacent to one of its faces and separated from the rest of the substrate, at least one transistor being created from the said region, the process comprising the following steps:generation of the said transistor until at least two superposed areas making up the transistor are obtained, the upper area including the transistor gate acting as a means of masking the lower area by defining a width of the masked area in the substrate not exceeding a determined limiting dimension for the material of the said substrate,ionic implantation of the substrate through the said surface of the substrate, capable of creating a layer of micro-cavities within the thickness of the substrate and at a depth close to the average ion penetration depth, delimiting the said region from the rest of the substrate except for an area corresponding to the masked area,heat treatment at a sufficiently high temperature to make a fracture line along this layer of micro-cavities, this fracture line being either continuous if the width of the masked area is sufficiently small compared with the said limiting dimension, or discontinuous if the width of the masked area is not sufficiently small with respect to the said delimiting dimension,cleavage of the thin film from the rest of the substrate, either by simple separation if the fracture line is continuous, or by the application of mechanical forces between the said region and the rest of the substrate if the fracture line is discontinuous.