초록 ▼

A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped with barium and melted in a silica crucible containing less than about 0.5% gases insoluble in silicon. During melting and throughout the crystal growing process the ba

A process for preparing doped molten silicon for use in a single silicon crystal growing process is disclosed. Polysilicon is doped with barium and melted in a silica crucible containing less than about 0.5% gases insoluble in silicon. During melting and throughout the crystal growing process the barium acts as a devitrification promoter and creates a layer of devitrified silica on the inside crucible surface in contact with the melt resulting in a lower level of contaminants in the melt and grown crystal.

대표청구항 ▼

[ What is claimed is:] [1.]1. A process for preparing a silicon melt in a silica crucible for growing a single silicon ingot, the process comprising:charging polysilicon to a crucible having a bottom wall and a sidewall formation, the bottom and sidewall formation having inside and outside surfaces,

[ What is claimed is:] [1.]1. A process for preparing a silicon melt in a silica crucible for growing a single silicon ingot, the process comprising:charging polysilicon to a crucible having a bottom wall and a sidewall formation, the bottom and sidewall formation having inside and outside surfaces, and the crucible containing less than about 0.5% gases insoluble in silicon;melting the polysilicon to form a mass of molten silicon in the crucible;doping the molten mass with barium; andforming a layer of devitrified silica on the inside surface of the crucible in contact with the molten mass, the layer being nucleated by the barium in the molten mass.