[특허]Method of tantalum nitride deposition by tantalum oxide densification

Method of tantalum nitride deposition by tantalum oxide densification 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/824.2
출원번호	US-0510582 (2000-02-22)
발명자 / 주소	Bakli Mouloud,FRX Ghanayem Steve G. Tran Huyen T.
출원인 / 주소	Applied Materials, Inc.
대리인 / 주소	Moser, Patterson & Sheridan, L.L.P.
인용정보	피인용 횟수 : 28 인용 특허 : 19

초록 ▼

The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and anunonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to form a metal/metal nitride liner/barrier scheme. The invention firer provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer. Alternatively, the metal nitride film may comprise the first and second electrodes.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method for processing a substrate comprising:a. depositing a metal oxide film on the substrate; andb. exposing the metal oxide film to a nitrating gas to convert substantially all of the metal oxide film to a metal nitride film consisting essentially of metal atoms an

이 특허에 인용된 특허 (19)

Ando Eiichi (Yokohama JPX) Suzuki Koichi (Yokohama JPX) Ebisawa Junichi (Tokyo JPX) Suzuki Susumu (Kawasaki JPX), Amorphous oxide film and article having such film thereon.
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Ando Eiichi (Yokohama JPX) Suzuki Koichi (Yokohama JPX) Ebisawa Junichi (Tokyo JPX) Suzuki Susumu (Kawasaki JPX), Amorphous oxide film and article having such film thereon.
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Ando Eiichi (Yokohama JPX) Suzuki Koichi (Yokohama JPX) Ebisawa Junichi (Tokyo JPX) Suzuki Susumu (Kawasaki JPX), Amorphous oxide film and article having such film thereon.
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Matsunaga Hideki (Yokohama JPX) Hirate Naoyuki (Yokosuka JPX), Apparatus for introducing samples into an inductively coupled, plasma source mass spectrometer.
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Levine Timothy E. ; Chen Ling ; Chang Mei ; Mosely Roderick C. ; Littau Karl A. ; Raaijmakers Ivo, Construction of a tantalum nitride film on a semiconductor wafer.
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Ahmad Nazir ; Tsai Keh-Chi, Energy storage device and methods of manufacture.
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Hasegawa Toshiaki (Kanagawa JPX), High dielectric constant material containing tantalum, process for forming high dielectric constant film containing tant.
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Kamiyama Satoshi (Tokyo JPX), Method for forming capacitor element of DRAM.
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Kamiyama Satoshi (Tokyo JPX), Method for manufacturing a semiconductor device.
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Nishikawa Nobuyuki,JPX ; Suzuki Toshiya,JPX, Method for production of semiconductor device.
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Al-Shareef Husam N. ; DeBoer Scott Jeffrey ; Thakur Randhir P. S., Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having .
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Agarwal Vishnu K. ; Derderian Garo J. ; Sandhu Gurtej S., Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell.
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Deng Charles Z. ; Tsai Keh Chi ; Ghantous Dania, Method of producing high surface area metal oxynitrides as substrates in electrical energy storage.
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Yoon Euisik (Sunnyvale CA) Kovacs Ronald P. (Mountain View CA) Thomas Michael E. (Milpitas CA), Method of providing a dielectric structure for semiconductor devices.
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Shankar Krishna (Mountain View CA) Ramani Ram (San Jose CA), Multilayer interconnection for integrated circuit structure having two or more conductive metal layers.
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Ohkawa Masanori (Kawasaki JPX) Ichikawa Toshiyuki (Kawasaki JPX) Kumagai Toshimitsu (Kawasaki JPX) Takashima Yuuichiro (Kawasaki JPX) Watanuki Hiroshi (Kawasaki JPX) Sato Shinichi (Kawasaki JPX) Ishi, Optical reading apparatus having optical scanner for scanning information on objects.
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Roberts Stanley (South Burlington VT) Ryan James G. (Essex Junction VT), Process for making high dielectric constant nitride based materials and devices using the same.
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Suzuki Masayuki (Kokubunji JPX) Haruta Ryo (Kokubunji JPX) Shinriki Hiroshi (Tokyo JPX) Nakata Masayuki (Kokubunji JPX), Process for manufacturing semiconductor devices.
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Peters Michael G. ; Lee Michael G. ; Beilin Solomon I. ; Takahashi Yasuhito, Sputtered and anodized capacitors capable of withstanding exposure to high temperatures.
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Urdahl, Randall S.; Narwankar, Pravin K.; Athreya, Shankarrram A.; Sinensky, Asher K.; Mendoza, Andrea M., Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
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A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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Method of tantalum nitride deposition by tantalum oxide densification 원문보기