IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0051567
(1998-04-10)
|
우선권정보 |
JPX, 19951012, P7-264472 |
국제출원번호 |
PCT/JP96/02961
(1996-10-14)
|
§371/§102 date |
19980410
(19980410)
|
국제공개번호 |
WO-9713885
(1997-04-17)
|
발명자
/ 주소 |
- Ishigami Takashi,JPX
- Watanabe Koichi,JPX
- Nitta Akihisa,JPX
- Maki Toshihiro,JPX
- Yagi Noriaki,JPX
|
출원인 / 주소 |
- Kabushiki Kaisha Toshiba, JPX
|
대리인 / 주소 |
Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
|
인용정보 |
피인용 횟수 :
22 인용 특허 :
3 |
초록
▼
An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y
An interconnector line of thin film comprising 0.001 to 30 at % of at least one kind of a first element capable of constituting an intermetallic compound of aluminum and/or having a higher standard electrode potential than aluminum, for example, at least one kind of the first element selected from Y, Sc, La, Ce, Nd, Sm, Gd, Tb, Dy, Er, Th, Sr, Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Tc, Re, Fe, Co, Ni, Pd, Ir, Pt, Cu, Ag, Au, Cd, Si, Pb and B; and one kind of a second element selected from C, O, N and H in a proportion of 0.01 at ppm to 50 at % of the first element, with the balance comprising substantially Al. In addition to having low resistance, such an Al interconnector line of thin film can prevent the occurrence of hillocks and the electrochemical reaction with an ITO electrode. The interconnector line of thin film can be obtained by sputtering in a dust-free manner by using a sputter target having a similar composition.
대표청구항
▼
[ What is claimed is:] [1.]1. A sputter target, consisting essentially of 0.001 to 30 at % of at least one first element constituting an intermetallic compound of Al, 0.01 at ppm to 50 at %, with respect to the amount of the first element, of at least one second element selected from the group consi
[ What is claimed is:] [1.]1. A sputter target, consisting essentially of 0.001 to 30 at % of at least one first element constituting an intermetallic compound of Al, 0.01 at ppm to 50 at %, with respect to the amount of the first element, of at least one second element selected from the group consisting of C, O, N and H, provided that an amount of N is not more than 3000 at ppm, and the balance of Al.
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