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A method of manufacturing a semiconductor device, which comprises the steps of subjecting a solid material to a first treatment consisting of a thermal treatment and/or a chemical treatment thereby to obtain a treated solid material having desired properties, and adhering the treated solid material

A method of manufacturing a semiconductor device, which comprises the steps of subjecting a solid material to a first treatment consisting of a thermal treatment and/or a chemical treatment thereby to obtain a treated solid material having desired properties, and adhering the treated solid material onto a substrate for the semiconductor device, thereby to form a thin film on the substrate.

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[ What is claimed is:] [11.]11. A method of manufacturing a semiconductor device, comprising:subjecting a solid material to first treatment conditions to obtain a treated solid material, said first treatment conditions being chosen from a first thermal treatment at a first temperature and a first ch

[ What is claimed is:] [11.]11. A method of manufacturing a semiconductor device, comprising:subjecting a solid material to first treatment conditions to obtain a treated solid material, said first treatment conditions being chosen from a first thermal treatment at a first temperature and a first chemical treatment; andadhering the treated solid material onto a substrate to obtain a multi-layer composite;wherein the substrate comprises at least one layer and at least one structure, and the at least one structure is unstable under the first treatment conditions.