초록 ▼

A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve

A gas distribution system for processing a semiconductor substrate includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, and a control valve. The gas supply lines include a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber. The control valve controls a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines. In a method of using the apparatus, a semiconductor substrate is supplied to the reaction chamber and the substrate is processed by supplying the mixed gas to the first and second zones, the control valve being adjusted such that a rate of flow of the mixed gas in the first and/or second gas supply line provides a desired ratio of flow rates of the mixed gas in the first and second zones.

대표청구항 ▼

[ What is claimed is:] [1.]1. A method of processing a substrate in a reaction chamber wherein a gas distribution system includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas

[ What is claimed is:] [1.]1. A method of processing a substrate in a reaction chamber wherein a gas distribution system includes a plurality of gas supplies, a mixing manifold wherein gas from the plurality of gas supplies is mixed together, a plurality of gas supply lines delivering the mixed gas to different zones in the chamber, the gas supply lines including a first gas supply line delivering the mixed gas to a first zone in the chamber and a second gas supply line delivering the mixed gas to a second zone in the chamber, at least one control valve controlling a rate of flow of the mixed gas in the first and/or second gas supply line such that a desired ratio of flow rates of the mixed gas is achieved in the first and second gas supply lines, at least one flow measurement device measuring flow rate of mixed gas in the first and/or second gas supply line, and a controller operating the at least one control valve in response to the flow rate measured by the at least one flow measurement device, the process comprising:supplying a semiconductor substrate to the reaction chamber;measuring flow rate of mixed gas in the first and/or second gas supply line with at least one flow measurement device; andprocessing the substrate by supplying the mixed gas to the first and second zones, the at least one control valve being adjusted by the controller in response to the flow rate measured by the at least one flow measurement device.