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In a method of making an ink jet recording head, oxide films are formed on both surfaces of a silicon substrate, followed by a first metal film, a piezoelectric film, and a second metal film. A positive resist is formed on the bottom of the substrate, and a first negative resist on the top over the

In a method of making an ink jet recording head, oxide films are formed on both surfaces of a silicon substrate, followed by a first metal film, a piezoelectric film, and a second metal film. A positive resist is formed on the bottom of the substrate, and a first negative resist on the top over the second metal film. The substrate is exposed between two masks. The positive resist is developed first with an alkaline solvent, and then the negative resist is developed with an organic solvent. A second negative resist is formed on top of the substrate before the bottom is etched with the patterned positive resist. The second negative resist is removed afterward, and then the second metal film is etched using the patterned first negative resist.

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1. A method for producing an ink-jet recording head comprising:forming on a first side of a substrate, in order, a first electrode, a piezoelectric thin film, and a second electrode; forming, on a second side of said substrate, an oxide film; disposing resists over said first and second sides of sai

1. A method for producing an ink-jet recording head comprising:forming on a first side of a substrate, in order, a first electrode, a piezoelectric thin film, and a second electrode; forming, on a second side of said substrate, an oxide film; disposing resists over said first and second sides of said substrate; positioning said substrate simultaneously between masks, and then exposing said resists to provide exposed resists; forming from said exposed resists a first resist pattern over said first side of said substrate and a second resist pattern over said second side of said substrate; forming over said first side of said substrate a third resist; then providing a patterned oxide film by patterning said oxide film using said second resist pattern as a mask; removing said second resist pattern with an electrolytic developing solution, wherein said third resist prevents direct exposure of one or more of said first and second electrodes to said electrolytic developing solution; patterning said second electrode using said first resist pattern as a mask; and forming ink cavity chambers on said second side of said substrate using said patterned oxide film as a mask; wherein: said first electrode and second electrodes are each formed of metals different from each other in electrochemical potential; and said third resist is a negative resist.