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Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/76
  • H01L-021/30
  • H01L-021/46
  • H01L-021/301
출원번호 US-0284801 (1999-06-18)
우선권정보 FR-0013449 (1996-11-05)
국제출원번호 PCT/FR97/01969 (1997-11-04)
§371/§102 date 19990618 (19990618)
국제공개번호 WO98/20543 (1998-05-14)
발명자 / 주소
  • Bernard Aspar FR
  • Michel Bruel FR
  • Thierry Barge FR
출원인 / 주소
  • Commissariat a l'Energie Atomique FR
대리인 / 주소
    Burns Doane Swecker & mathis LLP
인용정보 피인용 횟수 : 98  인용 특허 : 8

초록

The present invention relates to a production method for a thin film on a support that includes an ionic implantation stage in order to demarcate the thin film in a substrate, the aim of the ionic implantation being to create a layer of micro-cavities in the substrate, a stage to bond the substrate

대표청구항

1. Production method for a thin film made of a first material on a support made of a second material, said method comprising:an ionic implantation stage during which a face of a substrate of said first material is bombarded with ions in order to create a layer of micro-cavities in the volume of the

이 특허에 인용된 특허 (8)

  1. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Method for producing semiconductor substrate.
  2. Goesele Ulrich M. ; Tong Qin-Yi, Method for the transfer of thin layers monocrystalline material onto a desirable substrate.
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  4. Hanson David R. ; Huston ; III Hance H. ; Srikrishnan Kris V., Process for restoring rejected wafers in line for reuse as new.
  5. Bruel Michel (Veurey FRX), Process for the production of a relief structure on a semiconductor material support.
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  7. Biasse Beatrice,FRX ; Bruel Michel,FRX ; Zussy Marc,FRX, Process for transferring a thin film from an initial substrate onto a final substrate.
  8. Foerstner Juergen A. (Mesa AZ) Hughes Henry G. (Scottsdale AZ) D\Aragona Frank S. (Scottsdale AZ), Silicon film with improved thickness control.

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