초록 ▼

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric

A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.

대표청구항 ▼

1. A process for depositing and etching intermetal dielectric layers, comprising:depositing a first dielectric layer having a dielectric constant less than about 4.0; depositing a second dielectric layer having a dielectric constant less than about 4.0 on the first dielectric layer; and etching the

1. A process for depositing and etching intermetal dielectric layers, comprising:depositing a first dielectric layer having a dielectric constant less than about 4.0; depositing a second dielectric layer having a dielectric constant less than about 4.0 on the first dielectric layer; and etching the second dielectric layer under conditions wherein the second dielectric layer has an etch rate that is at least about three times greater than an etch rate for the first dielectric layer.