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A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detec

A semiconductor device includes a semiconductor layer used as a substrate formed on an insulating film, a plurality of MOS transistors arranged on the semiconductor layer and each having a gate, a source, and a drain, a pair of MOS transistors of the plurality of MOS transistors constituting a detection circuit for detecting magnitudes of potentials applied to the gates as a difference between conductances of the pair of transistors, and a diffusion layer region of the same conductivity type as that of the semiconductor layer, arranged on one of portions of the sources and drains of the pair of MOS transistors constituting the detection circuit, for connecting portions serving as the substrates of the pair of MOS transistors to each other.

대표청구항 ▼

1. A method of manufacturing a semiconductor device, comprising:arranging a plurality of MOS transistors on a semiconductor layer formed on an insulating film, each of said plurality of MOS transistors having a gate, a source, and a drain, and a pair of MOS transistors of said plurality of MOS trans

1. A method of manufacturing a semiconductor device, comprising:arranging a plurality of MOS transistors on a semiconductor layer formed on an insulating film, each of said plurality of MOS transistors having a gate, a source, and a drain, and a pair of MOS transistors of said plurality of MOS transistors constituting a detection circuit for detecting magnitudes of potentials applied to said gates as a difference between conductances of said pair of transistors, wherein at least a portion of at least one of said source and drain of each of said MOS transistors comprises a Ge-doped-Si region formed by deposition or implantation.