초록 ▼

Methods and apparatuses are disclosed that can introduce deliberate semiconductor film variation during semiconductor manufacturing to compensate for radial processing differences, to determine optimal device characteristics, or produce small production runs. The present invention radially varies th

Methods and apparatuses are disclosed that can introduce deliberate semiconductor film variation during semiconductor manufacturing to compensate for radial processing differences, to determine optimal device characteristics, or produce small production runs. The present invention radially varies the thickness and/or composition of a semiconductor film to compensate for a known radial variation in the semiconductor film that is caused by performing a subsequent semiconductor processing step on the semiconductor film.Additionally, methods and apparatuses are disclosed that can introduce deliberate semiconductor film variations to determine optimal device characteristics or produce small production runs. Introducing semiconductor film variations, such as thickness variations and/or composition variations, allow different devices to be made. A number of devices may be made having variations in semiconductor film. Because the semiconductor film has variations between the devices, device characteristics of the devices should be different. By measuring the device characteristics of devices having the variations, the device with the optimum device characteristic may be chosen, thereby indicating the appropriate semiconductor film thickness and/or composition. Moreover, small production runs of the same devices, having different characteristics, will allow the end user to select the appropriate devices for their needs.

대표청구항 ▼

1. A method for compensating for radial processing effects on a semiconductor wafer, the method comprising the steps of:depositing a semiconductor film to a first thickness at an inner radius of a semiconductor wafer; depositing the semiconductor film to a second thickness at an outer radius of the

1. A method for compensating for radial processing effects on a semiconductor wafer, the method comprising the steps of:depositing a semiconductor film to a first thickness at an inner radius of a semiconductor wafer; depositing the semiconductor film to a second thickness at an outer radius of the second semiconductor wafer, wherein the first and second thicknesses are chosen to reduce a known radial variation in the semiconductor film that is caused by performing a semiconductor processing step on the semiconductor film; and performing the semiconductor processing step on the semiconductor film.