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Transposed split of ion cut materials 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/301
  • H01L-021/302
출원번호 US-0476456 (1999-12-30)
발명자 / 주소
  • Robert W. Bower
대리인 / 주소
    John P. O'Banion
인용정보 피인용 횟수 : 32  인용 특허 : 3

초록

A method for the transposed splitting of ion cut materials. Acceptor centers are formed and selectively introduced into a solid material. In addition, atoms are introduced into the solid material at a location that is offset spatially from acceptor centers. The atoms introduced into the solid materi

대표청구항

1. A method for transposed splitting of ion cut materials, comprising the steps of:(a) introducing a plurality of acceptor centers into a solid material; (b) introducing a plurality of atoms into said material at a location spaced apart from the location of said acceptor centers; (c) transporting sa

이 특허에 인용된 특허 (3)

  1. Goesele Ulrich M. ; Tong Qin-Yi, Method for the transfer of thin layers monocrystalline material onto a desirable substrate.
  2. Bruel Michel (Veurey FRX), Process for the production of a relief structure on a semiconductor material support.
  3. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.

이 특허를 인용한 특허 (32)

  1. Pinnington, Thomas Henry; Zahler, James M.; Park, Young-Bae; Ladous, Corinne; Olson, Sean, Bonded intermediate substrate and method of making same.
  2. Pinnington, Thomas Henry; Zahler, James M.; Park, Young-Bae; Tsai, Charles; Ladous, Corinne; Atwater, Jr., Harry A.; Olson, Sean, Bonded intermediate substrate and method of making same.
  3. Atwater, Jr., Harry A.; Zahler, James M., Bonded semiconductor substrate.
  4. Joly, Jean-Pierre; Ulmer, Laurent; Parat, Guy, Integrated circuit on high performance chip.
  5. Bower, Robert W., Light emission from semiconductor integrated circuits.
  6. Bower,Robert W., Light emission from semiconductor integrated circuits.
  7. Sivananthan, Sivalingam; Garland, James W.; Carmody, Michael W., MBE growth technique for group II-VI inverted multijunction solar cells.
  8. Fournel, Franck; Moriceau, Hubert; Lagahe, Christelle, Method for making a stressed structure designed to be dissociated.
  9. Deguet, Chrystel; Clavelier, Laurent, Method for making a thin-film element.
  10. Aspar, Bernard; Lagahe, Christelle; Ghyselen, Bruno, Method for making thin layers containing microcomponents.
  11. Tauzin, Aurélie; Dechamp, Jérôme; Mazen, Frédéric; Madeira, Florence, Method for preparing thin GaN layers by implantation and recycling of a starting substrate.
  12. Nguyen, Nguyet-Phuong; Cayrefourcq, Ian; Lagahe-Blanchard, Christelle; Bourdelle, Konstantin; Tauzin, Aurélie; Fournel, Franck, Method for self-supported transfer of a fine layer by pulsation after implantation or co-implantation.
  13. Nguyen, Nguyet-Phuong; Cayrefourcq, Ian; Lagahe-Blanchard, Christelle, Method of catastrophic transfer of a thin film after co-implantation.
  14. Cayrefourcq,Ian; Mohamed,Nadia Ben; Lagahe Blanchard,Christelle; Nguyen,Nguyet Phuong, Method of detaching a thin film at moderate temperature after co-implantation.
  15. Tauzin, Aurélie; Faure, Bruce; Garnier, Arnaud, Method of detaching a thin film by melting precipitates.
  16. Deguet, Chrystel; Clavelier, Laurent; Dechamp, Jerome, Method of transferring a thin film onto a support.
  17. Fournel, Franck, Method of transferring a thin layer onto a target substrate having a coefficient of thermal expansion different from that of the thin layer.
  18. Atwater, Jr.,Harry A.; Zahler,James M., Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby.
  19. Atwater, Jr.,Harry A.; Zahler,James M., Method of using a germanium layer transfer to Si for photovoltaic applications and heterostructure made thereby.
  20. Lee,Tien Hsi, Methods for transferring a layer onto a substrate.
  21. Huggins, Harold A., Methods of fabricating magnetoresistive memory devices.
  22. Atwater, Jr., Harry A.; Zahler, James; Morral, Anna Fontcuberta i; Olson, Sean, Multi-junction solar cells and methods of making same using layer transfer and bonding techniques.
  23. Ottaviani, Giampiero; Corni, Federico; Ferrari, Paolo; Villa, Flavio Francesco, Process for manufacturing wafers usable in the semiconductor industry.
  24. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Process for the transfer of a thin film.
  25. Moriceau,Hubert; Bruel,Michel; Aspar,Bernard; Maleville,Christophe, Process for the transfer of a thin film.
  26. Moriceau, Hubert; Bruel, Michel; Aspar, Bernard; Maleville, Christophe, Process for the transfer of a thin film comprising an inclusion creation step.
  27. Bower,Robert W., Smooth thin film layers produced by low temperature hydrogen ion cut.
  28. Moriceau, Hubert; Aspar, Bernard; Margail, Jacques, Stacked structure and production method thereof.
  29. Tauzin,Aur��lie, Thin film splitting method.
  30. Bower, Robert W., Transposed split of ion cut materials.
  31. Atwater, Jr.,Harry A.; Zahler,James M.; Morral,Anna Fontcubera I, Wafer bonded epitaxial templates for silicon heterostructures.
  32. Atwater, Jr.,Harry A.; Zahler,James M.; Morral,Anna Fontcuberta i, Wafer bonded virtual substrate and method for forming the same.
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