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On-site generation of ultra-high-purity buffered-HF and ammonium fluoride 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C01C-001/16
  • C01B-007/19
출원번호 US-0881747 (1997-06-24)
발명자 / 주소
  • Joe G. Hoffman
  • R. Scot Clark
출원인 / 주소
  • Air Liquide America Corporation
대리인 / 주소
    Burns, Doane, Swecker & Mathis, L.L.P.
인용정보 피인용 횟수 : 10  인용 특허 : 25

초록

Provided is a novel method and system for preparing ultra-high-purity buffered-hydrofluoric acid or ammonium fluoride controlled concentration The method comprises bubbling purified ammonia vapor into ultra-pure hydrofluoric acid. The inventive method and system can be used as an on-site subsystem i

대표청구항

1. A method of preparing buffered-hydrofluoric acid or ammonium fluoride, suitable for use in fabricating semiconductor devices, comprising contacting high-purity water and hydrofluoric acid, thereby forming a diluted hydrofluoric acid and bubbling purified ammonia vapor into the diluted hydrofluori

이 특허에 인용된 특허 (25)

  1. Bassous Ernest (Bronx NY) Halbout Jean-Marc (Larchmont NY) Iyer Subramanian S. (Yorktown Heights NY) Kesan Vijay P. (Ridgefield CT), Apparatus for producing porous silicon on a substrate.
  2. Grant Robert W. (Excelsior MN) Novak Richard E. (Plymouth MN), Chemical processing system for maintaining concentration of semiconductor processing solution.
  3. Dobson Jesse C. (Oakland CA) McCormick Marshall (Oakland CA), Distillation method and apparatus for reprocessing sulfuric acid.
  4. Clark R. Scot (Fallbrook CA) Baird Stephen S. (Vista CA) Hoffman Joe G. (Cardiff-By-The-Sea CA), Manufacture of high precision electronic components with ultra-high purity liquids.
  5. Boghean Barry J. (St. Clair Beach NY CAX) Subbanna Somanahalli N. (East Amherst NY) Redmon Charles L. (Hamburg NY) Wamser Christian A. (Camillus NY), Manufacture of high purity low arsenic anhydrous hydrogen fluoride.
  6. Jenczewski Theodore J. (Sherrill NY) Sturtevant Robert L. (Hamburg NY) Morgan Thomas R. (Jordan NY) Boghean Barry J. (St. Clair Beach CAX) Butt Donald C. (Brampton CAX), Manufacture of high purity low arsenic anhydrous hydrogen fluoride.
  7. Sarvazyan Armen (East Brunswick NJ) Ponomarev Viktor (Rostov-on-Don RUX), Method and apparatus for measuring acoustic parameters in liquids using cylindrical ultrasonic standing waves.
  8. Davison John B. (Mission Viejo CA) Hsu Chung-Tseng (Laguna Hills CA), Method and apparatus for purifying hydrogen fluoride.
  9. Clark R. Scot (Fallbrook CA) Hoffman Joe G. (Oceanside CA) Davison John B. (Mission Viejo CA) Jones Alan W. (San Clemente CA) Jones ; Jr. Allen H. (Carlsbad CA) Persichini David W. (Oceanside CA) Yua, Method and apparatus for the continuous on-site chemical reprocessing of ultrapure liquids.
  10. Clark R. Scot (Fallbrook CA) Davison John B. (Laguna Hills CA) Persichini David W. (Oceanside CA) Yuan Wallace I. (Irvine CA) Lipisko Bruce A. (Encinitas CA) Jones Alan W. (Mountain View CA) Jones ; , Method for making ultrapure sulfuric acid.
  11. Briska Marian (Boeblingen DT) Hoffmeister Wolfgang (Gaertringen DT), Method of purifying ammonium fluoride solutions.
  12. Ohmi Tadahiro (Sendai JPX) Miki Nobuhiro (Osaka JPX) Maeno Matagoro (Izumi JPX) Hirayama Ryozi (Sakai JPX), Method of supplying dilute hydrofluoric acid and apparatus for use in this method for supplying the acid.
  13. Martin Stephen J. (Albuquerque NM) Ricco Antonio J. (Albuquerque NM), Multiple-frequency acoustic wave devices for chemical sensing and materials characterization in both gas and liquid phas.
  14. Hoffman Joe G. ; Clark R. Scot, On-site manufacture of ultra-high-purity hydrofluoric acid for semiconductor processing.
  15. Hoffman Joe G. (Cardiff-by-the-Sea CA) Clark R. Scot (Fallbrook CA), Point-of-use ammonia purification for electronic component manufacture.
  16. Grant Donald C. (Excelsior MN), Point-of-use recycling of wafer cleaning substances.
  17. Seseke-Koyro Ulrich (Vellmar DEX) Grossmann Andreas (Sehnde DEX) Rudolph Werner (Hanover DEX), Preparation of ultrapure hydrogen fluoride.
  18. Ito Hideo (Yokkaichi JPX) Narukawa Mitsutoshi (Yokkaichi JPX) Sakai Kazuhiro (Yokkaichi JPX), Process for cleaning silicon mass and the recovery of nitric acid.
  19. Motz Kaye L. (Ponca City OK) Freire Francisco J. (Wilmington DE) Edwards Eileen G. (Ponca City OK), Process for purifying hydrogen fluoride.
  20. Ziegenhain William C. (Ponca City OK), Process for purifying hydrogen fluoride.
  21. Brown Craig J. (Pickering CAX) Sheedy Michael A. (North York CAX), Process for regeneration of volatile acids.
  22. Schon Raul B. (Colonia Granada MXX), Process for the removal of arsenic in the manufacture of hydrofluoric acid.
  23. Shimono Tsugio (Tokyo JPX) Yamamoto Kenichi (Tokyo JPX), Removal of detrimental metal ions from hydrofluoric acid solution for cleaning silicon surfaces.
  24. Ohmi Tadahiro (Sendai JPX) Miki Nobuhiro (Osaka JPX) Kikuyama Hirohisa (Nara JPX), Surface treating composition for micro processing.
  25. Tanaka Masato (Hikone JPX) Nishizawa Hisao (Hikone JPX) Hirai Nobuyuki (Hikone JPX) Shinbara Kaoru (Hikone JPX) Yoshioka Hitoshi (Hikone JPX), Wafer cleaning method and apparatus therefore.

이 특허를 인용한 특허 (10)

  1. Yates,Donald L, Compositions for dissolution of low-k dielectric film, and methods of use.
  2. Yates, Donald L, Compositions for dissolution of low-k dielectric films, and methods of use.
  3. Yates, Donald L, Compositions for dissolution of low-k dielectric films, and methods of use.
  4. Yates,Donald L, Compositions for dissolution of low-k dielectric films, and methods of use.
  5. Yates,Donald L, Compositions for dissolution of low-k dielectric films, and methods of use.
  6. Yates, Donald L., Compositions for use in semiconductor devices.
  7. Yates, Donald L., Compositions for use in semiconductor devices.
  8. Dodd, Michael A.; McFarland, John; Sievert, Wolfgang, Method for producing highly pure solutions using gaseous hydrogen fluoride.
  9. Inagaki,Yasuhito; Shimizu,Mineo; Fujitani,Yoshihiro, Substrate cleaning method and substrate cleaning apparatus.
  10. Arndt, Russell H.; Hilscher, David F., Tool for manufacturing semiconductor structures and method of use.
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