초록 ▼

A semiconductor device is manufactured by a method including the steps of forming a through hole in an interlayer dielectric layer (silicon oxide layer, BPSG layer, etc.) formed on a semiconductor substrate having a device element. A barrier layer is formed on surfaces of the interlayer dielectric l

A semiconductor device is manufactured by a method including the steps of forming a through hole in an interlayer dielectric layer (silicon oxide layer, BPSG layer, etc.) formed on a semiconductor substrate having a device element. A barrier layer is formed on surfaces of the interlayer dielectric layer and the through hole. A wiring layer is formed on the barrier layer. The barrier layer is formed by a method including the following steps. A titanium layer that forms at least a part of the barrier layer is formed. A heat treatment is conducted in a nitrogen atmosphere to form a titanium nitride layer at least on a surface of the titanium layer. The titanium nitride layer is contacted with oxygen in an atmosphere including oxygen. A heat treatment is conducted in a nitrogen atmosphere to form titanium oxide layers and to densify the titanium nitride layer.

대표청구항 ▼

1. A method for manufacturing a semiconductor device comprising:forming a through hole in an interlayer dielectric layer formed on a semiconductor substrate having a device element; and forming a barrier layer on surfaces of the interlayer dielectric layer and the through hole; wherein the step of f

1. A method for manufacturing a semiconductor device comprising:forming a through hole in an interlayer dielectric layer formed on a semiconductor substrate having a device element; and forming a barrier layer on surfaces of the interlayer dielectric layer and the through hole; wherein the step of forming the barrier layer comprises: forming a metal layer on surfaces of the interlayer dielectric layer and the through hole; conducting a first heat treatment in a nitrogen atmosphere to form a metal nitride at least on a surface of the metal layer; contacting the metal nitride layer with oxygen in an atmosphere including oxygen; and conducting a second heat treatment in a nitrogen atmosphere to form two metal oxide layers on an upper and lower surface of the metal nitride layer, respectively, and to density the metal nitride layer.