|국가/구분||United States(US) Patent 등록|
|국제특허분류(IPC7판)||C23C-016/52 C23C-016/22 G05B-019/00 G05D-007/00 G05D-011/02|
|미국특허분류(USC)||118/697; 118/715; 118/725; 700/095; 700/108; 700/121; 700/266; 700/275; 700/282|
|발명자 / 주소|
|출원인 / 주소|
|대리인 / 주소||
|인용정보||피인용 횟수 : 62 인용 특허 : 14|
The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention ...
1. A substrate processing system comprising:a vacuum chamber, said vacuum chamber operable at a pressure between about 10-760 torr; a gas distribution manifold, located within said housing, to introduce reactive gases into said vacuum chamber; a ceramic heater to hold a wafer, said ceramic heater heating to a temperature of greater than about 500.degree. C.; means for causing deposition of an insulating layer comprising undoped silicate glass (USG) at said temperature of greater than about 500.degree. C. on said wafer from a reaction of silicon and oxyge...