초록 ▼

An RTD having a thin film HfN resistor formed on a substrate for temperature detection in accordance with the resistance of the HfN resistor. The RTD is a two lead device having high accuracy and a wide temperature range from 20 to 1400 degrees Kelvin. The substrate has bonding pads or contact strip

An RTD having a thin film HfN resistor formed on a substrate for temperature detection in accordance with the resistance of the HfN resistor. The RTD is a two lead device having high accuracy and a wide temperature range from 20 to 1400 degrees Kelvin. The substrate has bonding pads or contact strips connected to the resistor and processing electronics. An SiN thin film passivation layer is formed on the resistor and substrate. Two leads connect the bonding pads or contact strips to processing electronics and an indicator.

대표청구항 ▼

1. A high temperature resistance temperature device comprising:a substrate; a resistor made substantially of hafnium nitride (HfN) and formed on said substrate, said resistor having a measurable resistance over a temperature range of from about 30 to about 1400 degrees Kelvin; first and second leads

1. A high temperature resistance temperature device comprising:a substrate; a resistor made substantially of hafnium nitride (HfN) and formed on said substrate, said resistor having a measurable resistance over a temperature range of from about 30 to about 1400 degrees Kelvin; first and second leads forming the sole means of passing current through said resistor; said first and second leads being adapted for connection to processing electronics for determining the temperature of said resistor as a function of the resistance thereof.