초록 ▼

An improved semiconductor device and method for making it. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the

An improved semiconductor device and method for making it. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.

대표청구항 ▼

1. A method of forming a semiconductor device that has a dual damascene interconnect comprising:forming on a substrate a first insulating layer, which includes a carbon doped oxide; forming a second insulating layer on the surface of the first insulating layer, wherein the second insulating layer is

1. A method of forming a semiconductor device that has a dual damascene interconnect comprising:forming on a substrate a first insulating layer, which includes a carbon doped oxide; forming a second insulating layer on the surface of the first insulating layer, wherein the second insulating layer is under compressive stress and provides superior mechanical strength, when compared to the mechanical strength of the first insulating layer; forming a third insulating layer, which includes a carbon doped oxide, on the surface of the second insulating layer; forming a fourth insulating layer on the surface of the third insulating layer, wherein the fourth insulating layer is under compressive stress and provides superior mechanical strength, when compared to the mechanical strength of the third insulating layer; etching a via through the first, second, third and fourth insulating layers; forming a trench on top of the via and on top of the fourth insulating layer; and then filling the via and trench with a conductive material.