초록 ▼

A process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate from thermally oxidized silicon wafer so that processing temperatures are limited to 900.degree. C. is disclosed. The substrate is fabricated using H2 split process. Processing temperatures are l

A process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate from thermally oxidized silicon wafer so that processing temperatures are limited to 900.degree. C. is disclosed. The substrate is fabricated using H2 split process. Processing temperatures are limited to temperature of initiating of out-diffusion of oxygen from silicon dioxide into silicon. The limit prevents deterioration of buried oxide, and the oxide has low hole trap density that is equal to the trap density of an initial thermal silicon dioxide. Processing temperatures after implantation for H2 split process are limited to temperature of stability of dislocation microloops induced by the implantation at its damage peak. Resulting SOI structure have a gettering layer made from the microloops. The getter prevents yield drop caused by heavy metal contamination during the fabrication. Finished SOI devices have improved gate oxide integrity. Also, finished SOI circuitry has suppressed hot-electron controlled effects (backgating, transistor threshold voltage stability, side leakage). Also, radiation hardness of finished SOI devices is higher then the hardness of the SOI devices fabricated by conventional methods.

대표청구항 ▼

1. A process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate from silicon wafers comprising:providing a first silicon wafer thermal oxidizing of first silicon wafer in a dry ambient to obtain a thickness of the silicon dioxide layer 0.1 to 1 micrometer;

1. A process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrate from silicon wafers comprising:providing a first silicon wafer thermal oxidizing of first silicon wafer in a dry ambient to obtain a thickness of the silicon dioxide layer 0.1 to 1 micrometer; implanting of hydrogen through a face side of said first wafer to a depth exceeeding a depth of the silicon dioxide layer to a dose in a range 5.times.1016 to 2.times.1017 cm-2; providing a second silicon wafer; activation of face surfaces of said first and second silicon wafers; initial bonding of faces of said wafers thus making a wafer assembly with bonding interface; separating of said assembly along a layer with a peak concentration of said implanted hydrogen and strenthening of said initially bonded interface by heating said assembly to a temperature less than 900.degree. C. thus constituing a silicon-on-insulator wafer having a top silicon layer, silicon dioxide layer, and silicon substrate, and a leftover wafer; smoothing of surface of said silicon-on-insulator wafer comprising heating in hydrogen containing atmosphere to a temperature less than 900.degree. C. forming of semiconductor devices in said top silicon layer of said silicon-on-insulator wafer provided that any thermal processing steps carried out at temperature 900.degree. C. or less.