초록 ▼

In accordance with embodiments of the present invention a trench-level dielectric film (26) and a via-level dielectric film (24) are formed overlying a semiconductor device substrate (10). A via opening (42) is etched in the trench-level dielectric film with a first etch chemistry that has a higher

In accordance with embodiments of the present invention a trench-level dielectric film (26) and a via-level dielectric film (24) are formed overlying a semiconductor device substrate (10). A via opening (42) is etched in the trench-level dielectric film with a first etch chemistry that has a higher etch selectivity to the trench-level dielectric film (26) than to the via-level dielectric film (24). A trench opening (54) is patterned in a photoresist layer (52) overlying the trench-level dielectric film (26). The via-level dielectric film (24) is etched with a second etch chemistry to extend the via opening (42) into the via-level dielectric film (24). The trench-level dielectric film (26) is etched to form a trench opening.

대표청구항 ▼

1. A method of forming a semiconductor device, comprising:forming an opening that exposes a portion of an organic low dielectric constant material overlying a semiconductor substrate; forming an inorganic material over the portion of the organic low dielectric constant material; forming a first resi

1. A method of forming a semiconductor device, comprising:forming an opening that exposes a portion of an organic low dielectric constant material overlying a semiconductor substrate; forming an inorganic material over the portion of the organic low dielectric constant material; forming a first resist layer over the inorganic material; patterning a resist feature that exposes a portion of the inorganic material; and removing unpatterned portions of the inorganic material and organic low dielectric constant material defined by the resist feature.