초록 ▼

A process of producing a semiconductor article is disclosed which comprises the steps of epitaxially growing on at least one surface of a single-crystal substrate a plurality of single-crystal semiconductor layers differing from each other in at least one of the kind and the concentration of an impu

A process of producing a semiconductor article is disclosed which comprises the steps of epitaxially growing on at least one surface of a single-crystal substrate a plurality of single-crystal semiconductor layers differing from each other in at least one of the kind and the concentration of an impurity, making porous the plurality of single-crystal semiconductor layers so as to form a high porosity layer and a low porosity layer, forming a non-porous single-crystal layer on a surface of the single-crystal semiconductor layer as made porous, and bonding and single-crystal substrate and a support substrate to each other, wherein the bonded single-crystal substrate and support substrate are separated at at least one of a location in the high porosity layer and an interface of the high porosity layer with a layer adjacent thereto.

대표청구항 ▼

1. A process of producing a semiconductor article comprising the steps of:epitaxially growing on at least one surface of a single-crystal substrate a plurality of single-crystal semiconductor layers comprising a first single-crystal semiconductor layer and a second single-crystal semiconductor layer

1. A process of producing a semiconductor article comprising the steps of:epitaxially growing on at least one surface of a single-crystal substrate a plurality of single-crystal semiconductor layers comprising a first single-crystal semiconductor layer and a second single-crystal semiconductor layer and differing from each other in at least one of the kind and the concentration of an impurity; making porous the plurality of single-crystal semiconductor layers so as to form a high porosity layer in the first single-crystal semiconductor layer and a low porosity layer in the second single-crystal semiconductor layer; subsequently forming a non-porous single-crystal layer on a surface of the single-crystal semiconductor layers as made porous; and bonding the single-crystal substrate and a support substrate to each other, wherein the bonded single-crystal substrate and support substrate are separated at at least one of a location in the high porosity layer and an interface of the high porosity layer with a layer adjacent thereto.