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Aluminum and copper bimetallic bond pad scheme for copper damascene interconnects

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/44    H01L-021/4763    H01L-021/302   
미국특허분류(USC) 438/612; 438/613; 438/614; 438/627; 438/634; 438/638; 438/687; 438/688; 438/706; 438/745
출원번호 US-0609167 (2000-07-03)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    George O. Saile
인용정보 피인용 횟수 : 124  인용 특허 : 6
초록
▼

Improved processes for fabricating wire bond pads on pure copper damascene are disclosed by this invention. The invention relates to various methods of fabrication used for semiconductor integrated circuit devices, and more specifically to the formation of Al-Cu alloy top pad metal layers are described, which improve adhesion among the wire bond, top Al-Cu and the underlying copper pad metallurgy. This invention describes processes wherein a special Al-Cu bond layer or region is placed on top of the underlying copper pad metal. This Al-Cu bond pad on pur...

대표
청구항
▼

1. A method for fabricating wire bond pads for applications in MOSFET and CMOS semiconductor devices using copper dual damascene, a method comprising:providing a substrate, wafer or substrate module; providing a first level of conducting wiring being defined and over said substrate; depositing a passivating layer over the first level of conducting wiring; depositing a first insulating layer of dielectric, forming a first intermetal dielectric layer (IMD), over the passivating layer; depositing a second insulating layer of dielectric, forming a second int...

이 특허에 인용된 특허 (6)

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  6. Jang Syun-Ming,TWX ; Liang Mong-Song,TWX. Method to improve the adhesion of a molding compound to a semiconductor chip comprised with copper damascene structures. USP2000076090696.

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