초록 ▼

The present invention is to provide ceramic members for being used as members constituting a processing chamber for etching or cleaning semiconductor substrates or wafers by halogen plasma. A ceramic member includes at least 10% by volume of a compound of yttrium-aluminum-garnet (YAG) phase and not

The present invention is to provide ceramic members for being used as members constituting a processing chamber for etching or cleaning semiconductor substrates or wafers by halogen plasma. A ceramic member includes at least 10% by volume of a compound of yttrium-aluminum-garnet (YAG) phase and not more than 90% by volume of at least an oxide phase selected from aluminum oxide, yttrium oxide and aluminum nitride. Particularly, the ceramic member contains yttrium within a range of 35 to 80 mole % in terms of yttrium oxide Y2O3 and aluminum within a range of 20 to 65 mole % in terms of aluminum oxide Al2O3 to form a mixture of YAG phase with yttria phase, producing ceramic material having high corrosion resistance to halogenous gas and its plasma. Such ceramic material may be well applicable to members to be exposed by the halogen plasma, for example, a chamber wall, a wafer stage, a clamp ring, a shower head, which are used in systems for etching and cleaning semiconductor wafers. A ceramic member of the invention can also be composed of YAG and alumina or aluminum nitride, showing high thermal conductivity enough to prevent a deposit of the reaction products of halide over the whole members in the chamber by external heating.

대표청구항 ▼

1. A ceramic member having a resistance to halogen plasma, comprising not less than 10% by volume of a phase of yttrium-aluminum-garnet and not more than 90% by volume of at least a phase of aluminum oxide, which is formed of a sintered material containing as a main component any one of a combinatio

1. A ceramic member having a resistance to halogen plasma, comprising not less than 10% by volume of a phase of yttrium-aluminum-garnet and not more than 90% by volume of at least a phase of aluminum oxide, which is formed of a sintered material containing as a main component any one of a combination of both crystalline phases of yttrium oxide and yttrium-aluminum-garnet, a combination of both crystalline phases of aluminum oxide and yttrium-aluminum-garnet, wherein the sintered material contains zirconium oxide as a secondary component;and wherein the content of zirconium oxide is within a range of 0.05 to 5.0% by weight in the sintered material.