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Perimeter wafer lifting 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B23Q-007/00
출원번호 US-0944255 (2001-08-30)
발명자 / 주소
  • Eric H. Lenz
출원인 / 주소
  • Lam Research Corporation
대리인 / 주소
    Beyer Weaver & Thomas, LLP
인용정보 피인용 횟수 : 53  인용 특허 : 9

초록

The invention relates to an apparatus for lifting a substrate from a surface of a chuck subsequent to a processing step. The apparatus includes a perimeter pin for lifting the substrate from the surface of the chuck to a first position wherein the substrate is disposed on the perimeter pin during li

대표청구항

1. A method of removing a substrate from a surface of a work piece holder in a substrate process chamber, said method comprising:producing a holding force between said substrate and said surface during processing; breaking said holding force by lifting said substrate away from said surface to a firs

이 특허에 인용된 특허 (9)

  1. Takizawa Takeshi (Kunitachi JPX), Apparatus and method for supporting a substrate.
  2. Harashima Keiichi (Tokyo JPX) Akimoto Takeshi (Tokyo JPX), Electrostatic chuck with mechanism for lifting up the peripheral of a substrate.
  3. Aoyama Masaaki (Kanagawa JPX) Kimura Keiichi (Kanagawa JPX), Holding apparatus for holding an article such as a semiconductor wafer.
  4. Osada Tomoaki (Tokyo JPX) Shirai Yasuyuki (Tokyo JPX), Mechanism and method for mechanically removing a substrate.
  5. Yang Renyi, Method for use in bonding a chip to a substrate.
  6. Lenz Eric H., Perimeter wafer lifting.
  7. Sumnitsch Franz,ATX, Rotary chuck including pins for lifting wafers.
  8. Takabayashi Yukio,JPX, Substrate holding system and exposure apparatus using the same.
  9. Getchel Paul A. ; Cole ; Sr. Kenneth M. ; Lyden Henry A. ; Stone William M. ; Lopez Robert ; Schey Thomas ; Butcher Dana G., Workpiece chuck.

이 특허를 인용한 특허 (53)

  1. Caldwell,Brian Neal; Jeffer,Raymond Walter; Kindt,Louis M., Adaptive electrostatic pin chuck.
  2. Yokomizo,Kenji, Apparatus and method of securing a workpiece during high-pressure processing.
  3. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of a workpiece.
  4. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Apparatus for supercritical processing of multiple workpieces.
  5. Bettencourt, Gregory R.; Bhattacharyya, Gautam; Eng., Simon Gosselin; Chao, Sandy; de la Llera, Anthony; Mankidy, Pratik, Clamped monolithic showerhead electrode.
  6. Patrick, Roger; Bettencourt, Gregory R.; Kellogg, Michael C., Clamped monolithic showerhead electrode.
  7. Patrick, Roger; Bettencourt, Gregory R.; Kellogg, Michael C., Clamped monolithic showerhead electrode.
  8. Patrick, Roger; Bettencourt, Gregory R.; Kellogg, Michael C., Clamped monolithic showerhead electrode.
  9. Kadkhodayan, Babak; Dhindsa, Rajinder; de la Llera, Anthony; Kellogg, Michael C., Clamped showerhead electrode assembly.
  10. Kadkhodayan, Babak; Dhindsa, Rajinder; de la Llera, Anthony; Kellogg, Michael C., Clamped showerhead electrode assembly.
  11. Jones,William Dale, Control of fluid flow in the processing of an object with a fluid.
  12. Chen, Hsiang-Hung, Device and method for picking up optical elements.
  13. de la Llera, Anthony; Mankidy, Pratik, Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly.
  14. de la Llera, Anthony; Mankidy, Pratik, Edge-clamped and mechanically fastened inner electrode of showerhead electrode assembly.
  15. Bettencourt, Gregory R.; Bhattacharyya, Gautam; Eng, Simon Gosselin; Chao, Sandy, Gasket with positioning feature for clamped monolithic showerhead electrode.
  16. Bettencourt, Gregory R.; Bhattacharyya, Gautam; Gosselin, Simon; Chao, Sandy, Gasket with positioning feature for clamped monolithic showerhead electrode.
  17. Sheydayi,Alexei; Sutton,Thomas, Gate valve for plus-atmospheric pressure semiconductor process vessels.
  18. Fischer,Andreas, Heat transfer system for improved semiconductor processing uniformity.
  19. Sutton, Thomas R.; Biberger, Maximilan A., High pressure compatible vacuum chuck for semiconductor wafer including lift mechanism.
  20. Jones, William D., High pressure fourier transform infrared cell.
  21. Biberger, Maximilian A.; Layman, Frederick Paul; Sutton, Thomas Robert, High pressure processing chamber for semiconductor substrate.
  22. Biberger,Maximilian A.; Layman,Frederick Paul; Sutton,Thomas Robert, High pressure processing chamber for semiconductor substrate.
  23. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  24. Jones,William Dale, High-pressure processing chamber for a semiconductor wafer.
  25. Kelekar, Rajesh, Internal rinsing in touchless interstitial processing.
  26. Willwerth, Michael D.; Palagashvili, David, Low force substrate lift.
  27. Sheydayi,Alexei, Method and apparatus for clamping a substrate in a high pressure processing system.
  28. Goshi,Gentaro, Method and apparatus for cooling motor bearings of a high pressure pump.
  29. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method and apparatus for supercritical processing of multiple workpieces.
  30. Parent,Wayne M.; Goshi,Gentaro, Method and system for cooling a pump.
  31. Parent,Wayne M., Method and system for determining flow conditions in a high pressure processing system.
  32. Parent, Wayne M.; Geshell, Dan R., Method and system for passivating a processing chamber.
  33. Hansen,Brandon; Lowe,Marie, Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid.
  34. Kawamura,Kohei; Asano,Akira; Miyatani,Koutarou; Hillman,Joseph T.; Palmer,Bentley, Method for supercritical carbon dioxide processing of fluoro-carbon films.
  35. Biberger, Maximilian Albert; Layman, Frederick Paul; Sutton, Thomas Robert, Method for supercritical processing of multiple workpieces.
  36. Biberger,Maximilian Albert; Layman,Frederick Paul; Sutton,Thomas Robert, Method of supercritical processing of a workpiece.
  37. Sheydayi,Alexei, Non-contact shuttle valve for flow diversion in high pressure systems.
  38. Green, Revvie A., Piezoelectric wafer clamping system.
  39. Okita, Shogo; Asakura, Hiromi; Watanabe, Syouzou; Wada, Toshihiro; Okune, Mitsuhiro; Hiroshima, Mitsuru, Plasma processing apparatus and plasma processing method.
  40. Lee, William Davis, Platen with multiple shaped grounding structures.
  41. Sheydayi,Alexei, Pressure energized pressure vessel opening and closing device and method of providing therefor.
  42. Wuester,Christopher D., Process flow thermocouple.
  43. Mullee, William H., Removal of photoresist and photoresist residue from semiconductors using supercritical carbon dioxide process.
  44. Kadkhodayan, Babak; Dhindsa, Rajinder; de la Llera, Anthony; Kellogg, Michael C., Showerhead electrode.
  45. de la Llera, Anthony; Mankidy, Pratik; Kellogg, Michael C.; Dhindsa, Rajinder, Showerhead electrode.
  46. Kadkhodayan, Babak; de la Llera, Anthony, Showerhead electrode with centering feature.
  47. Yudovsky, Joseph, Spring-loaded pins for susceptor assembly and processing methods using same.
  48. Sahoda, Tsutomu; Shimai, Futoshi; Sato, Akihiko, Substrate processing system, carrying device and coating device.
  49. Sahoda, Tsutomu; Shimai, Futoshi; Sato, Akihiko, Substrate processing system, carrying device, and coating device.
  50. Gale,Glenn; Hillman,Joseph T.; Jacobson,Gunilla; Palmer,Bentley, System and method for processing a substrate using supercritical carbon dioxide processing.
  51. Jacobson,Gunilla; Yellowaga,Deborah, Treatment of a dielectric layer using supercritical CO.
  52. Kevwitch, Robert, Treatment of substrate using functionalizing agent in supercritical carbon dioxide.
  53. Sheydayi,Alexei, Vacuum chuck utilizing sintered material and method of providing thereof.
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