초록 ▼

Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the m

Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be "bottomless," thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.

대표청구항 ▼

1. A method of selectively depositing a layer using an atomic layer deposition process, the method comprising;providing a deposition substrate comprising a first insulating surface and a second surface, the first and second surfaces having different material compositions; and selectively coating ove

1. A method of selectively depositing a layer using an atomic layer deposition process, the method comprising;providing a deposition substrate comprising a first insulating surface and a second surface, the first and second surfaces having different material compositions; and selectively coating over the first surface as compared to the second surface by repeatedly alternating exposure of the deposition substrate to at least two reactant fluids.