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Crystalline gallium nitride and method for forming crystalline gallium nitride 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C30B-011/10
출원번호 US-0413446 (1999-10-06)
발명자 / 주소
  • Mark Philip D'Evelyn
  • Kristi Jean Narang
출원인 / 주소
  • General Electric Company
대리인 / 주소
    Robert P. Santandrea
인용정보 피인용 횟수 : 122  인용 특허 : 5

초록

A gallium nitride growth process forms crystalline gallium nitride. The process comprises the steps of providing a source gallium nitride; providing mineralizer; providing solvent; providing a capsule; disposing the source gallium nitride, mineralizer and solvent in the capsule; sealing the capsule;

대표청구항

1. A gallium nitride growth process for forming crystalline gallium nitride, the process comprising:providing a source gallium nitride, the source gallium nitride comprising gallium nitride: providing a mineralizer: providing a solvent; providing a capsule comprising a first end unit and a second en

이 특허에 인용된 특허 (5)

  1. Torikai Eiichi (Yao JA) Kawami Yoji (Kawachi-Nagano JA), Method for manufacture of single crystals b2 and slender single crystals of.
  2. Nakamura Shuji (Anan JPX), Method of depositing a gallium nitride-based III-V group compound semiconductor crystal layer.
  3. Porowski Sylwester (Warsaw PLX) Jun Jan (Warsaw PLX) Grzegory Izabella (Warsaw PLX) Krukowski Stanislaw (Warsaw PLX) Wroblewski Miroslaw (Warsaw PLX), Method of making a crystalline multilayer structure at two pressures the second one lower than first.
  4. Nakamura Shuji (Anan JPX) Iwasa Naruhito (Anan JPX) Senoh Masayuki (Anan JPX), Method of manufacturing P-type compound semiconductor.
  5. Nishizawa Minoru (Tokyo JPX), Single crystal growing method and apparatus.

이 특허를 인용한 특허 (122)

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