초록 ▼

A semiconductor device having a dual damascene structure having a highly reliable multilayered interconnection is applied to the present invention. A protective film (12) is formed on a first interconnection (11), and a modified SOG film (13a) is then provided thereon. An etch stopper film (14) is f

A semiconductor device having a dual damascene structure having a highly reliable multilayered interconnection is applied to the present invention. A protective film (12) is formed on a first interconnection (11), and a modified SOG film (13a) is then provided thereon. An etch stopper film (14) is formed on the modified SOG film (13a), and a modified SOG film (15a) is then formed. The modified SOG film (15a), the etch stopper film (14), and the modified SOG film (13a) are etched away using a resist pattern, to form a via hole (17). The modified SOG film (15a) is etched away using the resist pattern, to form a recess (19) serving as a trench interconnection portion. The etch stopper film (14) and the protective film (12) which are exposed are removed, and the recess is filled with a conductive material (20), to form a conductive plug in the via hole and a second interconnection.

대표청구항 ▼

1. A method of fabricating a semiconductor device, comprising the steps of:forming a first insulation film on a first interconnection; forming a coating film on the first insulation film and forming a second insulation film by modifying the coating film by implanting ion impurities into the coating

1. A method of fabricating a semiconductor device, comprising the steps of:forming a first insulation film on a first interconnection; forming a coating film on the first insulation film and forming a second insulation film by modifying the coating film by implanting ion impurities into the coating film; forming a third insulation film serving as an etch stopper on the second insulation film; forming a coating film on the third insulation film and forming a fourth insulation film by modifying the coating film by implanting impurities into the coating film; etching away the fourth insulation film, the third insulation film, and the second insulation film, to form a via hole; etching away the fourth insulation film in order to form a recess serving as a trench interconnection portion; then etching away the third insulation film and the first insulation film which are exposed; and filing the recess with a conductive material, to form a conductive plug in the via hole and a second interconnection.