[특허]Fabrication method for semiconductor integrated device

[미국특허] Fabrication method for semiconductor integrated device 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/44
출원번호	US-0588082 (2000-06-06)
우선권정보	JP-0172704 (1999-06-18)
발명자 / 주소	Yoshikazu Tanabe JP Yasuhiko Nakatsuka JP Tadashi Suzuki JP
출원인 / 주소	Hitachi, Ltd. JP
대리인 / 주소	Antonelli, Terry, Stout & Kraus, LLP
인용정보	피인용 횟수 : 6 인용 특허 : 13

초록 ▼

Annealing technology is capable of heating a wafer on which a copper film is formed at a desired temperature within a short period of time. A light-shielding plate 106 of SiC (silicon carbide) exhibiting a flat emissivity irrespective of the wavelengths and emitting light over a wide band of wavelengths is interposed between the wafer 1 on which is formed a copper film having a high light reflection factor and lamps 102. The lamps 102 are turned on in this state so that the light-shielding plate 106 is heated, first, and, then, the wafer 1 is heated by light radiated from the light-shielding plate 106 that is heated, thereby to anneal the copper film.

대표청구항 ▼

1. A fabrication method for semiconductor integrated circuit devices comprising the steps of:(a) introducing, by ion injection, a first type of impurities into the device surface of a semiconductor integrated circuit wafer having a plurality of unit chip regions on which are formed patterns corresponding to a memory region and to a logic region; (b) arranging said device surface of said wafer into which said first type of impurities have been introduced to be close to and opposed to a second main surface of a light-shielding plate having a size larger than a chip-forming portion of said wafer, said light-shielding plate having first and second main surfaces which are optically more uniform than said device surface of said wafer; (c) heating said light-shielding plate by irradiating said first main surface of said light-shielding plate with light from lamps in a state where said device surface of said wafer is close to and is opposed to said second main surface of said light-shielding plate; and (d) heating said wafer by light radiated from said second main surface of said light-shielding plate that is heated, thereby to anneal said wafer, wherein a converted thickness of said light-shielding plate is not larger than the thickness of said wafer, andwherein a gap between said second main surface of said light-shielding plate and said device surface of said wafer is not larger than 20 times the thickness of said wafer.

이 특허에 인용된 특허 (13) 인용/피인용 타임라인 분석

Kasashima Takashi,JPX ; Shimizu Hitoshi,JPX, Aligner for timing the alignment of a wafer and mask with a shutter to protect the wafer during alignment.
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Fu-Kang Tien,TWX ; Hung-Yeh Li,TWX, Apparatus and method for shielding a wafer holder.
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Matzke Douglas J. ; Steiss Donald E., Device for having processors each having interface for transferring delivery units specifying direction and distance and.
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Sajoto Talex ; Selyutin Leonid ; Zhao Jun ; Wolff Stefan, High temperature multi-layered alloy heater assembly and related methods.
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Grim Karen A. (Reading PA) Singh Shobha (Summit NJ) Van Uitert LeGrand G. (Morristown NJ) Zydzik George J. (Columbia NJ), Procedure for rapid thermal annealing of implanted semiconductors.
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Shimizu Shinji (Hoya JPX), Semiconductor integrated device having a field-effect transistor type memory cell array and peripheral circuitry structu.
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Moriuchi Noboru (Tokyo) Yamaguchi Yoshiki (Tokyo) Tanaka Toshihiko (Tokyo) Hasegawa Norio (Hinode) Kawamoto Yoshifumi (Kanagawa) Kimura Shin-ichiro (Hachioji) Kaga Toru (Urawa) Kure Tokuo (Kokubunji , Semiconductor memory device with recessed array region.
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Takase Satoru,JPX, Semiconductor memory for logic-hybrid memory.
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Johnsgard Kristian E. ; Mattson Brad S. ; McDiarmid James ; Zeitlin Vladimir J., System and method for thermal processing of a semiconductor substrate.
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Porter Cole D. (San Jose CA) Sanchez Jessie R. (San Jose CA) Kowalski Jeffrey M. (San Jose CA), Thermal processing apparatus and process.
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Ohmine Toshimitsu,JPX ; Schrems Martin, Thermal processing apparatus with a shield between heater and substrate.
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Johnsgard Kristian E. ; McDiarmid James, Thermal processing system with supplemental resistive heater and shielded optical pyrometry.
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Katoh Hiroyuki,JPX, Vacuum film formation method and device.
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이 특허를 인용한 특허 (6) 인용/피인용 타임라인 분석

Yokogawa, Ken'etsu; Miyake, Masatoshi, Heat treatment apparatus that performs defect repair annealing.
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Kersch, Alfred, Reaction chamber for processing a substrate wafer, and method for processing a substrate using the chamber.
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Otsuka, Satoshi; Fukuyama, Shun-ichi, Semiconductor device having multilevel copper wiring layers and its manufacture method.
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Otsuka, Satoshi; Fukuyama, Shun-ichi, Semiconductor device having multilevel copper wiring layers and its manufacture method.
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Tsai, Kao-Tsair; Tabata, Yasuko, Semiconductor manufacturing apparatus and method.
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Matsumoto,Akihito, Semiconductor wafer and method for testing ferroelectric memory device.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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[미국특허] Fabrication method for semiconductor integrated device 원문보기