초록 ▼

A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relativ

A multilayer dielectric stack is provided which has alternating layers of a high-k material and an interposing material. The presence of the interposing material and the thinness of the high-k material layers reduces or eliminate effects of crystallization within the high-k material, even at relatively high annealing temperatures. The high-k dielectric layers are a metal oxide of preferably zirconium or hafnium. The interposing layers are preferably amorphous aluminum oxide, aluminum nitride, or silicon nitride. Because the layers reduce the effects of crystalline structures within individual layers, the overall tunneling current is reduced. Also provided are atomic layer deposition, sputtering, and evaporation as methods of depositing desired materials for forming the above-mentioned multilayer dielectric stack.

대표청구항 ▼

1. An integrated circuit (IC) structure for an IC comprising a multilayer dielectric stack comprising:a) a first dielectric layer comprising a first dielectric material overlying a semiconductor substrate, wherein the first dielectric material is selected from the group consisting of ZrO2, and HfO2;

1. An integrated circuit (IC) structure for an IC comprising a multilayer dielectric stack comprising:a) a first dielectric layer comprising a first dielectric material overlying a semiconductor substrate, wherein the first dielectric material is selected from the group consisting of ZrO2, and HfO2; b) a second dielectric layer comprising a second dielectric material overlying the first dielectric layer wherein the second dielectric material is selected from the group consisting of Al2O3, AlN, SiN and Si3N4; c) a third dielectric layer comprising the first dielectric material overlying the first and second dielectric layers; and d) an electrode overlying the dielectric stack.