초록 ▼

With a method according to the invention, a semiconductor article such as an SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is etched by heat treatment in a hydrogen-containing reducing atmosphere in order to remove the surface by a desired height an

With a method according to the invention, a semiconductor article such as an SOI substrate having on the surface thereof a single crystal silicon film formed on an insulator is etched by heat treatment in a hydrogen-containing reducing atmosphere in order to remove the surface by a desired height and smooth it. The method is characterized in that the single crystal silicon film is arranged opposite to silicon oxide in a furnace during the etching process.

대표청구항 ▼

1. A method for etching a semiconductor article having a surface comprising silicon, said method comprising a step of heat-treating said silicon surface in a hydrogen-containing reducing atmosphere, while keeping said silicon surface in a state disposed opposite to a surface comprising silicon oxide

1. A method for etching a semiconductor article having a surface comprising silicon, said method comprising a step of heat-treating said silicon surface in a hydrogen-containing reducing atmosphere, while keeping said silicon surface in a state disposed opposite to a surface comprising silicon oxide with a predetermined distance separating them such that said silicon surface and said surface comprising silicon oxide interact with each other to thereby etch said silicon surface.