[특허]Process for forming a silicon-germanium base of a heterojunction bipolar transistor

Process for forming a silicon-germanium base of a heterojunction bipolar transistor 원문보기

IPC분류정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/331
출원번호	US-0867373 (2001-05-29)
발명자 / 주소	Feng-Yi Huang
출원인 / 주소	International Business Machines Corporation
대리인 / 주소	Ratner & Prestia
인용정보	피인용 횟수 : 27 인용 특허 : 13

초록 ▼

A process for forming a silicon-germanium base of a heterojunction bipolar transistor. First, a silicon substrate having a mesa surrounded by a trench is formed. Next, a silicon-germanium layer is deposited on the substrate and the portion of the silicon-germanium layer adjacent the mesa is removed to form the silicon-germanium base. In a second embodiment, the process comprises the steps of forming a silicon substrate having a mesa surrounded by a trench, forming a dielectric layer in the trench adjacent the mesa, and growing a silicon-germanium layer on the mesa top surface using selective epitaxial growth to form the silicon-germanium base.

대표청구항 ▼

1. A process for forming a silicon-germanium base of a heterojunction bipolar transistor, said process comprising the steps of:forming a silicon substrate having a mesa surrounded by a trench, said mesa having a top surface; forming a dielectric layer in said trench adjacent said mesa; and growing a silicon-germanium layer on said mesa top surface using selective epitaxial growth to form said silicon-germanium base, said silicon-germanium base having a side wall with said dielectric layer covering at least one portion of said side wall.

이 특허에 인용된 특허 (13)

Jambotkar Chakrapani G. (Hopewell Junction NY), Bipolar transistor integrated circuit technology.
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Laderman Stephen (Menlo Park CA) Scott Martin (San Francisco CA) Kamins Theodore I. (Palo Alto CA) Hoyt Judy L. (Palo Alto CA) King Clifford A. (Palo Alto CA) Gibbons James F. (Palo Alto CA) Noble Da, Fabricating a semiconductor device with strained Si₁-xGex layer.
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Morizuka Kouhei (Yokohama JPX), Heterojunction bipolar transistor with base electrode having Schottky barrier contact to the emitter.
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Imai Kiyotaka (Tokyo JPX), Heterojunction bipolar transistor with silicon-germanium base.
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Kato Hirosi (Tokyo JPX), Method for fabricating a bipolar transistor with a base layer having an extremely low resistance.
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Herbert Francois ; Bashir Rashid, Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epita.
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Streit Dwight Christopher (Seal Beach CA) Lammert Michael (Manhattan Beach CA) Oki Aaron Kenji (Torrance CA), Method for making selective subcollector heterojunction bipolar transistors.
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Hamasaki Toshihiko (Yokohama JPX) Satake Hideki (Kawasaki JPX), Method of fabricating a miniaturized heterojunction bipolar transistor.
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Mohammad S. Noor (Hopewell Junction NY), Method of fabricating a triple heterojunction bipolar transistor.
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Boles Timothy Edward, Method of fabricating polysilicon based resistors in Si-Ge heterojunction devices.
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Taka Shin-ichi (Yokosuka JPX) Kimura Kouji (Kawasaki JPX) Naruse Hiroshi (Kawasaki JPX) Kumamaru Kuniaki (Yokohama JPX), Method of manufacturing a hetero bipolar transistor.
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Huang Feng-Yi, Process for forming a silicon-germanium base of heterojunction bipolar transistor.
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Imai Kiyotaka (Tokyo JPX), Process of producing heterojunction bipolar transistor with silicon-germanium base.
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Li, Hao; Droopad, Ravindranath; Marshall, Daniel S.; Wei, Yi; Hu, Xiao M.; Liang, Yong, Method for growing a monocrystalline oxide layer and for fabricating a semiconductor device on a monocrystalline substrate.
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IPC	Description
A	생활필수품
A62	인명구조; 소방(사다리 E06C)
A62B	인명구조용의 기구, 장치 또는 방법(특히 의료용에 사용되는 밸브 A61M 39/00; 특히 물에서 쓰이는 인명구조 장치 또는 방법 B63C 9/00; 잠수장비 B63C 11/00; 특히 항공기에 쓰는 것, 예. 낙하산, 투출좌석 B64D; 특히 광산에서 쓰이는 구조장치 E21F 11/00)
A62B-1/08	.. 윈치 또는 풀리에 제동기구가 있는 것

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연합인증

Process for forming a silicon-germanium base of a heterojunction bipolar transistor 원문보기

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Process for forming a silicon-germanium base of a heterojunction bipolar transistor 원문보기

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이 특허에 인용된 특허 (13)

이 특허를 인용한 특허 (27)

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