초록 ▼

A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral

A method of manufacturing a semiconductor substrate can effectively prevent a chipping phenomenon and the production of debris from occurring in part of the insulation layer and the semiconductor by removing a outer peripheral portion of the semiconductor substrate so as to make the outer peripheral extremity of the insulation layer to be located between the outer peripheral extremity of the semiconductor layer and that of the support member and hence the semiconductor layer and the insulation layer produce a stepped profile.

대표청구항 ▼

1. A method of manufacturing a semiconductor substrate comprising a support member, an insulation layer arranged on the support member and a semiconductor layer arranged on the insulation layer, the outer peripheral extremity of the semiconductor layer being located inside the outer peripheral extre

1. A method of manufacturing a semiconductor substrate comprising a support member, an insulation layer arranged on the support member and a semiconductor layer arranged on the insulation layer, the outer peripheral extremity of the semiconductor layer being located inside the outer peripheral extremity of the insulation layer and the outer peripheral extremity of the insulation layer being located inside between the outer peripheral extremity of the semiconductor layer and that of the support member so that the outer peripheral portion of the semiconductor substrate including the insulation layer and the semiconductor layer shows a stepped profile, comprising steps of removing an extreme portion from the insulation layer and also an extreme portion from the semiconductor layer so as to make both the outer peripheral extremity of the insulation layer and that of the semiconductor layer to be located inside the outer peripheral extremity of the support member and removing an extreme portion from the semiconductor layer so as to make the outer peripheral extremity of the semiconductor layer to be located inside the outer peripheral extremity of the insulation layer.