초록 ▼

In an integrated circuit device, there are various optimum gate lengths, thickness of gate oxide films, and threshold voltages according to the characteristics of circuits. In a semiconductor integrated circuit device in which the circuits are integrated on the same substrate, the manufacturing proc

In an integrated circuit device, there are various optimum gate lengths, thickness of gate oxide films, and threshold voltages according to the characteristics of circuits. In a semiconductor integrated circuit device in which the circuits are integrated on the same substrate, the manufacturing process is complicated in order to set the circuits to the optimum values. As a result, in association with deterioration in the yield and increase in the number of manufacturing days, the manufacturing cost increases. In order to solve the problems, according to the invention, transistors of high and low thresholds are used in a logic circuit, a memory cell uses a transistor of the same high threshold voltage and a low threshold voltage transistor, and an input/output circuit uses a transistor having the same high threshold voltage and the same concentration in a channel, and a thicker gate oxide film.

대표청구항 ▼

1. A semiconductor integrated circuit device comprising;a dynamic memory cell array, each memory cell having a transfer NMOS transistor and a capacitor, and a data input and output circuit having a first NMOS transistor, wherein the thickness of the gate film of said transfer NMOS transistor and sai

1. A semiconductor integrated circuit device comprising;a dynamic memory cell array, each memory cell having a transfer NMOS transistor and a capacitor, and a data input and output circuit having a first NMOS transistor, wherein the thickness of the gate film of said transfer NMOS transistor and said first NMOS transistor is the same, and wherein the channel length of said transfer NMOS transistor is larger than the channel length of said first NMOS transistor.