초록 ▼

A CMOS image sensor die is fabricated and packaged to allow the light sensitive area of the die to be illuminated from either the front side or the backside, or both. The implementation is achieved using wafer level processing that facilitates photon collection at both surfaces. This approach permit

A CMOS image sensor die is fabricated and packaged to allow the light sensitive area of the die to be illuminated from either the front side or the backside, or both. The implementation is achieved using wafer level processing that facilitates photon collection at both surfaces. This approach permits processing apt the wafer level to allow the deposition of color filter arrays (CFA) on either surface. The silicon is thinned and the bump contacts and interconnect lines are relocated away from the image area of the die. The die is covered with an optically transparent material to provide additional support.

대표청구항 ▼

1. A method of manufacturing an image sensor comprising:attaching a first cover layer to an active surface of a silicon wafer; attaching a second cover layer to an opposite surface of the silicon wafer; notching the silicon wafer along the second cover layer; and forming electrical interconnections

1. A method of manufacturing an image sensor comprising:attaching a first cover layer to an active surface of a silicon wafer; attaching a second cover layer to an opposite surface of the silicon wafer; notching the silicon wafer along the second cover layer; and forming electrical interconnections on the notched surface of the silicon wafer; wherein the image sensor is light sensitive from a back side.