IPC분류정보
| 국가/구분 |
United States(US) Patent
등록
|
| 국제특허분류(IPC7판) |
|
| 출원번호 |
US-0947845
(2001-09-06)
|
|
발명자
/ 주소 |
- Tommie W. Kelley
- Dawn V. Muyres
- Mark J. Pellerite
- Timothy D. Dunbar
- Larry D. Boardman
- Terrance P. Smith
|
| 출원인 / 주소 |
- 3M Innovative Properties Company
|
| 대리인 / 주소 |
|
| 인용정보 |
피인용 횟수 :
103 인용 특허 :
11 |
초록
▼
Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The monolayer precursor com
Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The monolayer precursor composition has the formula: X-Y-Zn, wherein X is H or CH3; Y is a linear or branched C5-C50 aliphatic or cyclic aliphatic connecting group, or C8-C50 group comprising an aromatic group and a C3-C44 aliphatic or cyclic aliphatic connecting group; Z is selected from from -PO3H2, -OPO3H2, benzotriazolyl (-C6H4N3), carbonyloxybenzotriazole (-OC(.dbd.O)C6H4N3), oxybenzotriazole (-O-C6H4N3), aminobenzotriazole (-NH-C6H4N3), -CONHOH, -COOH, -OH, -SH, -COSH, -COSeH, -C5H4N, -SeH, -SO3H, -NC, -SiCl(CH3)2, -SiCl2CH3, amino, and phosphinyl; and n is 1, 2, or 3 provided that n=1 when Z is -SiCl(CH3)2 or -SiCl2CH3.Methods of making a thin film transistor and an integrated circuit comprising thin film transistors are also provided.
대표청구항
▼
1. An organic thin film transistor (OTFT) comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer, the monolayer being a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer, the precursor comprising a
1. An organic thin film transistor (OTFT) comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer, the monolayer being a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer, the precursor comprising a composition having the formula:X-Y-Zn, wherein X is H or CH3;Y is a linear or branched C5-C50 aliphatic or cyclic aliphatic connecting group, or a linear or branched C8-C50 group comprising an aromatic group and a C3-C44 aliphatic or cyclic aliphatic connecting group; Z is selected from -PO3H2, -OPO3H2, benzotriazolyl (-C6H4N3), carbonyloxybenzotriazole (-OC(.dbd.O)C6H4N3), oxybenzotriazole (-O-C6H4N3), aminobenzotriazole (-NH-C6H4N3), -CONHOH, -COOH, -OH, -SH, -COSH, -COSeH, -C5H4N, -SeH, -SO3H, -NC, -SiCl(CH3)2, -SiCl2CH3, amino, and phosphinyl; and n is 1, 2, or 3 provided that n 1 when Z is -SiCl(CH3)2 or -SiCl2CH3.
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