초록 ▼

Within a method for forming a plasma etched layer, there is first provided a substrate. There is then formed over the substrate a microelectronic layer. There is then etched within a plasma reactor chamber, and while employing a plasma etch method, the microelectronic layer to form a plasma etched m

Within a method for forming a plasma etched layer, there is first provided a substrate. There is then formed over the substrate a microelectronic layer. There is then etched within a plasma reactor chamber, and while employing a plasma etch method, the microelectronic layer to form a plasma etched microelectronic layer. Finally, there is then purged the plasma reactor chamber with an inert purge gas, without subsequently evacuating the plasma reactor chamber, prior to removing the substrate having formed thereover the plasma etched microelectronic layer from the plasma reactor chamber. In an alternative there is purged a load lock chamber integral to the plasma reactor chamber with an inert purge gas, without subsequently evacuating the load lock chamber, prior to removing the substrate having formed thereover the plasma etched microelectronic layer from the load lock chamber.

대표청구항 ▼

1. A method for forming a plasma etched layer comprising:providing a substrate; forming over the substrate a microelectronic layer; etching within a plasma reactor chamber, and while employing a plasma etch method, the microelectronic layer to form a plasma etched microelectronic layer; transferring

1. A method for forming a plasma etched layer comprising:providing a substrate; forming over the substrate a microelectronic layer; etching within a plasma reactor chamber, and while employing a plasma etch method, the microelectronic layer to form a plasma etched microelectronic layer; transferring the substrate having formed thereover the plasma etched microelectronic layer to a load lock chamber which is integral with the plasma reactor chamber; and purging the load lock chamber with an inert purge gas, without subsequently evacuating the load lock chamber, prior to removing the substrate having formed thereover the plasma etched layer from the load lock chamber.