초록 ▼

A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode

A resin material having low dielectric constant is used as an inter-layer insulating film and its bottom surface is contacted with a silicon oxide film across the whole surface thereof. Thereby, the surface may be flattened and capacity produced between a thin film transistor and an pixel electrode may be reduced. Further, it allows to avoid a problem that impurity ions and moisture infiltrate into the lower surface of the resin material, thus degrading the reliability of whole semiconductor device.

대표청구항 ▼

1. A semiconductor device comprising:a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at le

1. A semiconductor device comprising:a substrate; a switching element including at least one thin film transistor formed over said substrate, said thin film transistor comprising: a semiconductor island comprising crystalline silicon formed over said substrate, said semiconductor island having at least one pair of impurity regions with a channel region therebetween; a gate insulating film formed on said semiconductor island; and a gate electrode formed over said channel region with said gate insulating film interposed therebetween, a first insulating film comprising silicon nitride formed over said switching element; a second insulating film comprising silicon oxynitride formed on said first insulating film; and an organic resin film formed on said second insulating film; a pixel electrode formed over said organic resin film and electrically connected to one of said impurity regions.