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A single-substrate-heat-processing apparatus includes an airtight process chamber, the interior of which is partitioned into a process space and a lower space by a mount plate and a shield frame. Heating lamps are disposed at a position outside the process chamber and below the mount plate. The moun

A single-substrate-heat-processing apparatus includes an airtight process chamber, the interior of which is partitioned into a process space and a lower space by a mount plate and a shield frame. Heating lamps are disposed at a position outside the process chamber and below the mount plate. The mount plate is supported by a shield frame via an isolator, which has a thermal conductivity lower than that of the mount plate. The isolator is formed of a lower member and an upper member. The upper member has outer and inner cover portions, which cover the inner edge of the shield frame and the outer edge of the mount plate, respectively, in a non-contacting state.

대표청구항 ▼

1. A single-substrate-heat-processing apparatus for performing a semiconductor process, comprising:an airtight process chamber; a metal shield frame partitioning the process chamber into a process space on an upper side and a lower space on a lower side, the shield plate having an opening and an inw

1. A single-substrate-heat-processing apparatus for performing a semiconductor process, comprising:an airtight process chamber; a metal shield frame partitioning the process chamber into a process space on an upper side and a lower space on a lower side, the shield plate having an opening and an inwardly extending portion extending in the opening; a mount plate configured to support a target substrate within the process space, the mount plate consisting essentially of one or more material selected from the group consisting of silicon carbide, aluminum nitride, black aluminum nitride, and carbon coated with CVD-SiC, and mounted on the inwardly extending portion to partition the process chamber into the process space and the lower space; an isolator intervening between the mount plate and the shield frame to substantially prevent the mount plate and the shield frame from coming into direct contact with each other, the isolator consisting essentially of one or more material selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicon oxide, and zirconia, wherein the isolator comprises a lower member mounted on the inwardly extending portion, and an upper member formed independently of the lower member and mounted on the lower member, and the upper member comprises an outer cover portion covering an inner edge of the shield frame to prevent the process gas from entering downward, and an inner cover portion covering an outer edge of the mount plate to prevent the process gas from entering downward and to restrict movement of the mount plate in a vertical direction; a supply section configured to supply a process gas into the process space; an exhaust section configured to vacuum-exhaust the process chamber; and a heating lamp disposed below the mount plate to radiate light onto the mount plate, thereby heating the target substrate on the mount plate.